Transient Phenomena in Plasma-Enhanced Chemical Vapor Deposition Processes of Thin-Film Silicon
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概要
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The time-dependent gas phase kinetics in plasma-enhanced chemical vapor deposition (PECVD) processes has been studied. The temporal evolutions of the gas phase species, concentration and plasma parameters are measured in hydrogen-diluted silane plasmas, using plasma diagnostic techniques including mass spectrometry, optical emission spectroscopy, and probe and laser light scattering techniques. It is identified that gas phase kinetics such as electron collisions, chemical reactions, and particle transport play important roles in the transient phenomena of thin-film silicon PECVD processes. The characteristic times of the gas decomposition and depletion, diffusive transport, and nanoparticle growth and drift are discussed.
- 2010-10-25
著者
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Kondo Michio
Research Center For Photovoltaic Technologies Aist
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Yoshida Isao
Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Nunomura Shota
Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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