Hydrogen-doped In2O3 as High-mobility Transparent Conductive Oxide
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概要
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We have developed hydrogen (H)-doped In2O3 films on glass with high mobility and high near-infrared transparency by using sputtering process performed at room temperature, followed by post-annealing treatment at 200 °C. To incorporate H-donor into In2O3 matrix, H2O vapor has been introduced into a chamber during the deposition. In the post-annealing of the films, phase transition from amorphous to polycrytalline was confirmed to occur. The resulting In2O3 films containing 1.9–6.3 at. % H show quite large mobility as high as 98–130 cm2/(V s) at carrier density of $(1.4--1.8)\times 10^{20}$ cm-3. We attributed the high mobility in the film to suppression of grain boundary defects as well as multicharged and neutral impurities.
- Japan Society of Applied Physicsの論文
- 2007-07-25
著者
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Koida Takashi
Research Center For Photovoltaics National Institute Of Advanced Industrial Science And Technology (
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Fujiwara Hiroyuki
Research Center For Photovoltaics National Institute Of Advanced Industrial Science And Technology (
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Kondo Michio
Research Center For Photovoltaic Technologies Aist
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Koida Takashi
Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Kondo Michio
Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Fujiwara Hiroyuki
Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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