Glow-Discharge Deposition of Amorphous Silicon from SiH_3F
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概要
- 論文の詳細を見る
Glow discharge deposition of a-Si:H:F from SiH_3F as well as SiH_2F_2 gas has been studied in comparison to that from SiH_4. Deposition rate from SiH_3F exceeds that from SiH_4 by 2-3 times in magnitude under a low-power deposition condition.
- 社団法人応用物理学会の論文
- 1984-08-20
著者
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MATSUDA Akihisa
Electrotechnical Laboratory
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TANAKA Kazunobu
Electrotechnical Laboratory
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Matsuda A
Department Of Electrical And Electronic Engineering Faculty Of Engineering Toyama University
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YAGII Kiyoshi
Electrotechnical Laboratory
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KAGA Takao
Electrotechnical Laboratory
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Yagii Kiyoshi
Electrotechnical Laboratory:central Glass Co. Ltd.
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