Characteristics of Schottky Barrier Diodes in Reactively Sputtered Amorphous Si:H : III-3: AMORPHOUS SOLAR CELLS : Device Physics
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1981-06-01
著者
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Yamasaki Satoshi
Joint Research Center For Atom Technology-national Institute For Advanced Interdisciplinary Research
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Yamasaki S
National Inst. Advanced Interdisciplinary Res. Tsukuba Jpn
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MATSUDA Akihisa
Electrotechnical Laboratory
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TANAKA Kazunobu
Electrotechnical Laboratory
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Yamasaki S
Joint Res. Center For Atom Technol. (jrcat) Tsukuba Jpn
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OKUSHI Hideyo
Electrotechnical Laboratory
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YAMASAKI Shuichi
Superconducting Sensor Laboratory
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NAKAGAWA Katumi
Electrotechnical Laboratory
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YAMASAKI Satoshi
TOA Nenryo Kogyo K.K.
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YAMAMOTO Hideo
Electrotechnical Laboratory
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MATSUMURA Mitsuo
TOA Nenryo Kogyo K.K.
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IIZIMA Sigeru
Electrotechnical Laboratory
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Nakagawa Katsumi
Electrotechnical Laboratory
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