Structural Study on Amorphous-Microcrystalline Mixed-Phase Si:H Films

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1981-06-05

著者

• Yamasaki S

  National Inst. Advanced Interdisciplinary Res. Tsukuba Jpn

• TANAKA Kazunobu

  Electrotechnical Laboratory

• Yamasaki S

  Joint Res. Center For Atom Technol. (jrcat) Tsukuba Jpn

• Yamasaki S

  Nec Corp. Kanagawa Jpn

• YAMASAKI Satoshi

  Electrotechnical Laboratory

• YAMASAKI Shuichi

  Superconducting Sensor Laboratory

• YOSHIDA Toshihiko

  TOA Nenryo K.K.

• MATUDA Akihisa

  Electrotechnical Laboratory

• Matsuda A

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Toyama University

関連論文

• Characteristics of Superconducting Gd-Ba-Cu-O Thin Films
• Incorporation of Constituent Atoms of Transparent Conductive Films into Hydrogenated Amorphous Silicon via Gas Phase : Surfaces, Interfaces and Films
• The Orthorhombic-to-Tetragonal Phase Transition in Sputtered Gd-Ba-Cu-O Thin Films by Low Temperature Processing : Electrical Properties of Condensed Matter
• Thermal Stability of Hydrogen in Silicon Nitride Films Prepared by ECR Plasma CVD method : Surfaces, Interfaces and Films
• Effects of Chemical Composition and Morphology of Substrate Surfaces on Crustallinity of Ultrathin Hydrogenated Microcrystalline Silicon Films
• Selective Area Growth of Si on Thin Insulating Layers for Nanostructure Fabrication
• Coherent Anti-Stokes Raman Spectroscopy of Radio-Frequency Discharge Plasmas of Silane and Disilane
• Ohmic Contact Properties of Magnesium Evaporated onto Undoped and P-doped a-Si: H
• Detection of Neutral Species in Silane Plasma Using Coherent Anti-Stokes Raman Spectroscopy
• A Photoluminescence Study of Amorphous-Microcrystalline Mixed-Phase Si: H Films
• Determination of the Optical Constants of Thin Films Using Photoacoustic Spectroscopy
• Effect of Light Soaking Temperature on the Metastable Defect Distribution in Magnetron Sputtered Hydrogenated Amorphous Silicon Films
• Fabrication of High-Quality Nb/Al-AlO_x-Al/Nb Junctions by a Simple Process
• Fabrication and Evaluation of Superconducting Quantum Interference Devices with Nb/Al-AlO_x-Al/Nb Edge Junctions
• Performance Evaluation of Representative Figure Method for Proximity Effect Correction : Electron Beam Lithography
• Performance Evaluation of Representative Figure Method for Proximity Effect Correction
• Representative Figure Method for Proximity Effect Correction [II]
• Representative Figure Method for Proximity Effect Correction
• Reactive Ion Etching of Al Alloy Films in a Rotating Magnetic Field
• Hydrogen-Initiated Nucleation and Growth of Hydrogenated Amorphous Silicon on Graphite
• Substrate Temperature Dependence of Deuteron Bonding States in Deuterated Amorphous Silicon Studied by ^2H Nuclear Magnetic Resonance
• ^2D and ^1H Nuclear Magnetic Resonance Study of Deuterated Amorphous Silicon and Partially Deuterated Hydrogenated Amorphous Silicon
• ^1H Nuclear Magnetic Resonance Study of Hydrogen Distribution in Partially Deuterated Hydrogenated Amorphous Silicon
• Structural Differences between Hydrogenated and Deuterated Amorphous Silicon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition
• The Staebler-Wronski Effect on Defect Luminescence in Hydrogenated Amorphous Silicon
• ^P Nuclear Magnetic Resonance Study of Local Bonding Configuration of Phosphorus in Amorphous Silicon-Hydrogen-Phosphorus Alloys
• Silicon-29 Nuclear Magnetic Resonance Study of Amorphous-Microcrystalline Mixed-Phase Hydrogenated Silicon
• Characteristics of Schottky Barrier Diodes in P-doped Amorphous Si : H : III-3: AMORPHOUS SOLAR CELLS (2) : Characterization
• Anomalous Optical and Structural Properties of B-Doped a-Si:H
• Gap-State Profiles of a-Si: H Deduced from Below-Gap Optical Absorption
• Gap States Distribution of Undoped a-Si: H Determined with Phase-Shift Analysis of the Modulated Photocurrent
• Determination of the Density of State Distribution of a-Si: H by Isothermal Capacitance Transient Spectroscopy
• Structural Study on Amorphous-Microcrystalline Mixed-Phase Si:H Films
• Characteristics of Schottky Barrier Diodes in Reactively Sputtered Amorphous Si:H : III-3: AMORPHOUS SOLAR CELLS : Device Physics
• Boron Doping of Hydrogenated Silicon Thin Films
• ^1H Nuclear Magnetic Resonance Study of Hydrogenated Amorphous Silicon Deposited from a Xe-diluted Silane Plasma
• Photodoping of Ag into Single Crystal As_2S_3
• Plasma Enhanced Chemical Vapour Deposition of Hydrogenated Amorphous Silicon from Dichlorosilane and Silane Gas Mixtures
• Annealing Energy Distribution of Light-Induced Defects of Hydrogenated Amorphous Silicon Films Grown from Silane and Dichlorosilane Gas Mixtures
• Comparison of Defect Annealing Kinetics of a-Si:H Prepared by Pure Silane and Helium Diluted Silane by Triode Plasma Chemical Vapour Deposition
• The Effect of Mesh Bias and Substrate Bias on the Properties of a-Si:H Deposited by Triode Plasma Chemical Vapour Deposition
• Comparative Evaluation of Ultrathin Mask Layers of SiO_2, SiO_x, and SiN_x for Selective Area Growth of Si
• Spatial Distribution of SiH_3 Radicals in RF Silane Plasma
• SiH_3 Radical Density in Pulsed Silane Plasma
• Stability of Two-Step-Growth Bi_2Sr_2CuO_x Films on Si(001) using SrO Buffer Layer(Superconductors)
• In-situ Annealing of Thin SrO Films Grown on Si(001)-2 × 1 by Molecular Beam Epitaxy
• The Isolated Se Chains in the Channels of Mordenite Crystal
• Photoconductivity and Photoaeoustie Spectra of Trigonal, Rhombohedral, Orthorhombic, and α-, β-, and γ-Monoclinic Selenium
• Device-Grade Amorphous Silicon Prepared by High-Pressure Plasma
• Effects of Hydrogen Diluted silane plasma on Amorphous Silicon Solar Cells
• Enhancement of Open Circuit Voltage via Light soaking in Amorphous Silicon Solar Cells
• Gas Phase Diagnosis of Disilane/Hydrogen RF Glow Discharge Plasma and Its Application to High Rate Growth of High Quality Amorphous Silicon
• Effects of Electrode Distance on Plasma Parameters and a-Si:H Film Properties in Plasma CVD Process
• Phase Shift Spectroscopy of Modulated Photocurrent: Its Application to Gold Levels in Crystalline Si
• Comments on "Endotherm in Switch-on Process in Semiconducting Glasses
• Guiding Principle in the Preparation of High-Photosensitive Hydrogenated Amorphous Si-Ge Alloys from Glow-Discharge Plasma
• Wide-Rrange Control of Crystallite Size and Its Orientation in Glow-Discharge Deposited μc-Si:H
• Electrical and Structural Properties of Phosphorous-Doped Glow-Discharge Si:F:H and Si:H Films
• A New Model for the Carrier Transport in Amorphous Si: H Schottky Barrier Diodes : II-3: AMORPHOUS SEMICONDUCTOR PHOTOVOLTAIC DEVICES
• Glow-Discharge Deposition of Amorphous Silicon from SiH_3F
• Influence of Power-Source Frequency on the Properties of GD a-Si:H
• Glow-Discharge Deposition of a-Si: H from Pure Si_2H_6 and Pure SiH_4

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