Reactive Ion Etching of Al Alloy Films in a Rotating Magnetic Field

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1993-02-15

著者

• Hayashi T

  Ulvac Japan Ltd. Kanagawa Jpn

• TANABE Masafumi

  ULVAC Japan Co., Ltd.

• MATSUDA Akio

  ULVAC Japan Co., Ltd.

• SUNADA Takeshi

  ULVAC Japan Co., Ltd.

• FUJIMOTO Hideki

  ULVAC Japan Co., Ltd.

• HAYASHI Toshio

  ULVAC Japan Co., Ltd.

• Fujimoto H

  Daido Inst. Technol. Nagoya Jpn

• Tanabe M

  Ulvac Japan Ltd. Kanagawa Jpn

• Matsuda A

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Toyama University

• Sunada T

  Ulvac Japan Ltd. Chigasaki Jpn

• Hayashi Toshio

  Ulvac Corporation

関連論文

• Characteristics of Superconducting Gd-Ba-Cu-O Thin Films
• Incorporation of Constituent Atoms of Transparent Conductive Films into Hydrogenated Amorphous Silicon via Gas Phase : Surfaces, Interfaces and Films
• The Orthorhombic-to-Tetragonal Phase Transition in Sputtered Gd-Ba-Cu-O Thin Films by Low Temperature Processing : Electrical Properties of Condensed Matter
• Thermal Stability of Hydrogen in Silicon Nitride Films Prepared by ECR Plasma CVD method : Surfaces, Interfaces and Films
• XPS Studies of Bi-Sr-Ca-Cu-O Single Crystal and Ceramics Surfaces
• Coherent Anti-Stokes Raman Spectroscopy of Radio-Frequency Discharge Plasmas of Silane and Disilane
• Reactive Ion Etching of Al Alloy Films in a Rotating Magnetic Field
• Structural Study on Amorphous-Microcrystalline Mixed-Phase Si:H Films
• Detection of Oxygen Deficient Regions in YBa_2 Cu_3 O_x Superconductors by Polarized Optical Microscopy
• Large Levitation Force due to Flux Pinning in YBaCuO Superconductors Fabricated by Melt-Powder-Melt-Growth Process
• Fracture Toughness of YBaCuO Prepared by MPMG Process
• TEM Observation of Interfaces between Y_2BaCuO_5 Inclusions and the YBa_2Cu_3O_7 Matrix in Melt-Powder-Melt-Growth Processed YBaCuO
• Plasma Enhanced Chemical Vapour Deposition of Hydrogenated Amorphous Silicon from Dichlorosilane and Silane Gas Mixtures
• Annealing Energy Distribution of Light-Induced Defects of Hydrogenated Amorphous Silicon Films Grown from Silane and Dichlorosilane Gas Mixtures
• Comparison of Defect Annealing Kinetics of a-Si:H Prepared by Pure Silane and Helium Diluted Silane by Triode Plasma Chemical Vapour Deposition
• The Effect of Mesh Bias and Substrate Bias on the Properties of a-Si:H Deposited by Triode Plasma Chemical Vapour Deposition
• Absolute Measurement of Lattice Spacing d(220)in Floating Zone Silicon Crystal
• Absolute Measurement of Lattice Spacing d(220) Silicon Crystal in Floating Zone
• Usefulness of Magnetic Neutral Loop Discharge Plasma in Plasma Processing
• Growth of Y_2O_2S:Eu Thin Films by Reactive Magnetron Sputtering and Electroluminescent Characteristics
• Characteristics of Y_2O_3:Eu/ZnS/Y_2O_3:Eu Red Light Emitting Electroluminescent Devices
• Structure and Luminescent Property of Y_2O_2S:Eu Thin Films Prepared by Magnetron Sputtering
• Gamma-Ray-Induced Absorption Bands in Pure-Silica-Core Fibers
• Gamma-Ray Induced Absorption Band at 770 nm in Pure Silica Core Optical Fibers
• Spatial Distribution of SiH_3 Radicals in RF Silane Plasma
• SiH_3 Radical Density in Pulsed Silane Plasma
• Stability of Two-Step-Growth Bi_2Sr_2CuO_x Films on Si(001) using SrO Buffer Layer(Superconductors)
• In-situ Annealing of Thin SrO Films Grown on Si(001)-2 × 1 by Molecular Beam Epitaxy
• LEED-AES and XPS Studies of Bi-Sr-Ca-Cu-O Single Crystal Surfaces
• Dry Etch Process in Magnetic Neutral Loop Discharge Plasma
• Device-Grade Amorphous Silicon Prepared by High-Pressure Plasma
• Effects of Hydrogen Diluted silane plasma on Amorphous Silicon Solar Cells
• Enhancement of Open Circuit Voltage via Light soaking in Amorphous Silicon Solar Cells
• Gas Phase Diagnosis of Disilane/Hydrogen RF Glow Discharge Plasma and Its Application to High Rate Growth of High Quality Amorphous Silicon
• Effects of Electrode Distance on Plasma Parameters and a-Si:H Film Properties in Plasma CVD Process
• Light Bounces in Two-Beam Scanning Laser Interferometers
• Light Bounces in Two-Beam Scanning Laser Interferometers
• X-Ray Photoelectron Spectroscopy Studies of 7 K-Phase Bi-System Single Crystals
• XPS Studies of 80 K-Phase Bi-Sr-Ca-Cu-O Single Crystals
• LEED-AES Observations of 7 K- and 80 K-phase Bi-Sr-Ca-Cu-O Single Crystals
• Low-Temperature Silicon Epitaxial Growth by Photochemical Vapor Deposition Using Vacuum Ultraviolet Light
• Charge Build-Up in Magnetron-Enhanced Reactive Ion Etching : Etching
• Charge Build-Up in Magnetron-Enhanced Reactive Ion Etching
• Observation of Induction Power Dependence on the Magnetic Neutral Loop Discharge Plasma Thermalization Phenomena
• Submitting to International Symposium on Fusion Nuclear Technology
• Photo-Ionizalion Assisted Photo-CVD of Silicon Nitride Film by Microwave-Excited Deuterium Lamp
• Glow-Discharge Deposition of Amorphous Silicon from SiH_3F
• Influence of Power-Source Frequency on the Properties of GD a-Si:H
• Glow-Discharge Deposition of a-Si: H from Pure Si_2H_6 and Pure SiH_4
• Measurements of Parameters of Two-Electron-Temperature Plasma Produced by Electron Cyclotron Resonance
• Observations of C_mF_n Radicals in Reactive Ion Beam Etching

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