Photo-Ionizalion Assisted Photo-CVD of Silicon Nitride Film by Microwave-Excited Deuterium Lamp
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概要
- 論文の詳細を見る
Silicon nitride films have been formed using a photo-CVD apparatus with a microwave-excited deuterium lamp. The BHF etching rate, 40-70 Å/ min, deposited at 320℃ is lower by less than one-tenth than that deposited using a conventional low-pressure mercury lamp, indicating formation of a high density film. The deposition rate has been enhanced dramatically from 13 Å/min to 100 Å/min by incorporating the photo-ionization assisted effect, which is brought about by an ionization of a substrate surface, ions formed by collisions of reactant gases with photoelectrons and photo-ionized ions.
- 社団法人応用物理学会の論文
- 1986-09-20
著者
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HAYASHI Toshio
ULVAC Japan Co., Ltd.
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TAMAGAWA Kouichi
ULVAC Corporation
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Komiya Souji
Ulvac Corporation
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Hayashi Toshio
Ulvac Corporation
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