Observations of C_mF_n Radicals in Reactive Ion Beam Etching
スポンサーリンク
概要
- 論文の詳細を見る
CmFn radicals produced in an electron-cyclotron-resonance ion source for reactive ion beam etching of SiO_2 were observed with photoionization mass spectrometry. Pressure dependence of the densities of radicals shows an apparent contribution of the radicals to the etching rate in a pressure region higher than about 2×10^<-2> Pa.
- 社団法人応用物理学会の論文
- 1982-12-20
著者
-
HAYASHI Toshio
ULVAC Japan Co., Ltd.
-
Komiya Souji
Ulvac Corporation
-
Miyamura Masao
Ulvac Corporation
-
Hayashi Toshio
Ulvac Corporation
関連論文
- Reactive Ion Etching of Al Alloy Films in a Rotating Magnetic Field
- Dry Etch Process in Magnetic Neutral Loop Discharge Plasma
- A Molecular and Jon-Beam Epitaxy System for the Growth of III-V Compound Semiconductors Using a Mass-Separated, Low-Energy Group-V Jon Beam
- Molecular Beam Epitaxy of InP Using Low Energy P^+ Ion Beam
- Low-Temperature Silicon Epitaxial Growth by Photochemical Vapor Deposition Using Vacuum Ultraviolet Light
- Charge Build-Up in Magnetron-Enhanced Reactive Ion Etching : Etching
- Charge Build-Up in Magnetron-Enhanced Reactive Ion Etching
- Observation of Induction Power Dependence on the Magnetic Neutral Loop Discharge Plasma Thermalization Phenomena
- Submitting to International Symposium on Fusion Nuclear Technology
- A Simultaneous RHEED/AES Combined System
- Photo-Ionizalion Assisted Photo-CVD of Silicon Nitride Film by Microwave-Excited Deuterium Lamp
- A Simple Ion Energy Analyser Equipped with a Quadrupole Mass Spectrometer
- Measurements of Parameters of Two-Electron-Temperature Plasma Produced by Electron Cyclotron Resonance
- Observations of C_mF_n Radicals in Reactive Ion Beam Etching
- UHV-IMMA Development and Application to Hydrogen Detection
- Stabilization of the Discharge in Sputter-Ion Pumps