A Molecular and Jon-Beam Epitaxy System for the Growth of III-V Compound Semiconductors Using a Mass-Separated, Low-Energy Group-V Jon Beam

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A new technique for growing III-V compound semiconductor films has been developed, in which the sticking coefficient of the group V element can be increased by implanting mass-separated, high-purity group-V ions at low energy. The newly-constructed growth system consists of an ordinary MBE system and a UHV low-energy ion-implantation system. The deceleration characteristics of the group V (arsenic and phosphorus) ton beams obtained with this low-energy ion implantation system are described. Single-crystal GaAs films are obtained with this growth method between 220℃ and 550℃ even with a flux ratio of unity by implanting As^+ ious at 100 and 200 eV. The PL spectra at 4.2 K of the non-doped films grown at 450℃ or higher show well-defined features due to bound exciton and donor-acceptorpairs. High-quality InP layers are also obtained between 2l0℃ and 420℃ even with a flux ratio of unity by implanting P^+ ions at 100 and 200 eV. These results indicate that the controllability of the group V element in MBE can be greatly improved by implanting mass-separated, high-purity group-V ions at low energy.
社団法人応用物理学会の論文
1985-09-20