Low-Temperature Silicon Epitaxial Growth by Photochemical Vapor Deposition Using Vacuum Ultraviolet Light
スポンサーリンク
概要
- 論文の詳細を見る
Homoepitaxial Si growth by photochemical vapor deposition (photo-CVD) of Si_2H_6 using vacuum ultraviolet (VUV) light from a microwave-excited D_2 lamp has been investigated. Epitaxial Si films can be obtained by this method at a growth temperature of 650℃, which is much lower than that used in conventional thermal CVD. A surface cleaning method of Si substrates by VUV light irradiation has been proposed. It was found from AES and RHEED studies that light irradiation prior to film growth is effective for the elimination of oxide and carbon contaminants on the substrate. Crystalline quality of grown films and dissociation mechanism of Si_2H_6 by VUV light are also described.
- 社団法人応用物理学会の論文
- 1987-07-20
著者
-
SHIMIZU Saburo
ULVAC JAPAN, Ltd
-
HAYASHI Toshio
ULVAC Japan Co., Ltd.
-
YAMAKAWA Hiroyuki
ULVAC JAPAN, Lid.
-
Yamakawa Hiroyuki
Ulvac Corporation
-
Shimizu Saburo
Ulvac Corporation
-
GONOHE Narishi
ULVAC Corporation
-
TAMAGAWA Kouichi
ULVAC Corporation
-
Gonohe N
Ulvac Inc. Susono Jpn
-
Hayashi Toshio
Ulvac Corporation
関連論文
- Optimization of GaN Growth with Ga-Polarity by Referring to Surface Reconstruction Reflection High-Energy Electron Diffraction Patterns : Semiconductors
- Essential Change in Crystal Qualities of GaN Films by Controlling Lattice Polarity in Molecular Beam Epitaxy
- Influence of Mn Incorporation on Molecular Beam Epitaxial Growth of GaMnN Film :Surfaces, Interfaces, and Films
- Reactive Ion Etching of Al Alloy Films in a Rotating Magnetic Field
- Characterization of Polarity of Wurtzite GaN Film Grown by Molecular Beam Epitaxy Using NH_3
- Selectively Doped n-InAlAs/InP Heterostructures Grown by MOCVD
- Dry Etch Process in Magnetic Neutral Loop Discharge Plasma
- Characterization of Polarity of Plasma-Assisted Molecular Beam Epitaxial GaN{0001}Film Using Coaxial Impact Collision Ion Scattering Spectroscopy
- Computer Simulation for Analysis of Lattice Polarity of Wurtzite GaN{0001} Film by Coaxial Impact Collision Ion Scattering Spectroscopy
- Terminating Structure of Plasma-Assisted Molecular Beam Epitaxial GaN{0001} Film Surface Identified by Coaxial Impact Collision Ion Scattering Spectroscopy
- A Molecular and Jon-Beam Epitaxy System for the Growth of III-V Compound Semiconductors Using a Mass-Separated, Low-Energy Group-V Jon Beam
- Molecular Beam Epitaxy of InP Using Low Energy P^+ Ion Beam
- Epitaxial Growth of α-Fe Film on Si(111) Substrate by Low-Energy Direct Ion Beam Deposition
- Low-Temperature Silicon Epitaxial Growth by Photochemical Vapor Deposition Using Vacuum Ultraviolet Light
- Charge Build-Up in Magnetron-Enhanced Reactive Ion Etching : Etching
- Charge Build-Up in Magnetron-Enhanced Reactive Ion Etching
- Observation of Induction Power Dependence on the Magnetic Neutral Loop Discharge Plasma Thermalization Phenomena
- Generation of Extremely High Vacuum with a New Sputter Ion Pump
- Submitting to International Symposium on Fusion Nuclear Technology
- A Simultaneous RHEED/AES Combined System
- Photo-Ionizalion Assisted Photo-CVD of Silicon Nitride Film by Microwave-Excited Deuterium Lamp
- Measurements of Parameters of Two-Electron-Temperature Plasma Produced by Electron Cyclotron Resonance
- Observations of C_mF_n Radicals in Reactive Ion Beam Etching