Generation of Extremely High Vacuum with a New Sputter Ion Pump

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概要

• 論文の詳細を見る

• We have developed a sputter ion pump (SIP) to obtain a lower ultimate pressure.The pressure of a test chamber was reduced to 6.8×10<SUP>-10</SUP> Pa by the SIP after 250°C bakeout for 48 hours. The pump is able to start the discharge in 1.41.8 min after turning on the power supply at 1.61.9×10<SUP>-9</SUP> Pa, and in about 10 s at 14×10<SUP>-8</SUP>Pa. The achievement of the extremely high-vacuum, XHV, and the easy discharge initiation indicate that the Penning discharge is still strongly maintained at the very low pressure.

• 日本真空協会の論文
• 1994-09-20

著者

• Yamakawa Hiroyuki

  Ulvac Corporation

• Yamakawa Hiroyuki

  Ulvac Japan Ltd.

• Kotani Tsuyoshi

  Ulvac Japan Ltd.

• Hau Shen

  Ulvac Japan Ltd.

• KINPARA Hiroyuki

  ULVAC JAPAN Ltd.

• HIRASAWA Kazutoshi

  ULVAC JAPAN Ltd.

• NISHIYAMA Masaaki

  ULVAC JAPAN Ltd.

• HUJINO Koichi

  ULVAC JAPAN Ltd.

• NAKAJIMA Katsuji

  ULVAC JAPAN Ltd.

• TAKAGI Nozomu

  ULVAC JAPAN Ltd.

関連論文

• Selectively Doped n-InAlAs/InP Heterostructures Grown by MOCVD
• Low-Temperature Silicon Epitaxial Growth by Photochemical Vapor Deposition Using Vacuum Ultraviolet Light
• Generation of Extremely High Vacuum with a New Sputter Ion Pump

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