Charge Build-Up in Magnetron-Enhanced Reactive Ion Etching
スポンサーリンク
概要
- 論文の詳細を見る
Charge build-up in magnetron-enhanced reactive ion etching (MERIE) was evaluated with metal nitride oxide semiconductor (MNOS) capacitors. In static magnetic field, negative flat band voltage (V_<fb>) shifts of more than -1.5 V were observed in the area under high-density plasma, and more than 2-V V_<fb> shifts were observed at the edge of the wafer near the N and S poles. This distributed V_<fb> shift was considered to result from nonuniform plasma potential caused by secondary electron E×B drift motion. In rotated magnetic field, V_<fb> shifts were reduced. No significant V_<fb> shifts were observed when the magnet was rotated at 120 μm. The V_<fb> shift reduction in rotated magnetic field was supposed to result from charge neutralization by alternate charge build-up.
- 社団法人応用物理学会の論文
- 1991-11-30
著者
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林 卓
Department Of Materials Science Shonan Institute Of Technology
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HAYASHI Toshio
ULVAC Japan Co., Ltd.
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HOGA Hiroshi
Toppan Printing Co., Lid.
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HOGA Hiroshi
Oki Electric Industry Co., Ltd.
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Hoga Hiroshi
Oki Electric Industry Co. Ltd.
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Yokoyama Toshifumi
Storage Media Systems Development Center Matsushita Electric Industrial Co. Ltd.
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Yokoyama T
Storage Media Systems Development Center Matsushita Electric Industrial Co. Ltd.
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ORITA Toshiyuki
Oki Electric Industry Co., Ltd.
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YOKOYAMA Takashi
Oki Electric Industry Co., Ltd.
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Yokoyama T
Tokai Univ. Kanagawa Jpn
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Orita Toshiyuki
Oki Electric Industry Co. Ltd.
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Hayashi Toshio
Ulvac Corporation
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