Tunnel Oxynitride Film Formation for Highly Reliable Flash Memory (Special Issue on ULSI Memory Technology)
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概要
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A tunnel film (9 nm thick) formed by a rapid thermal oxidation in dry oxygen-rapid thermal nitridation in NH_3-rapid thermal oxynitridation in N_2O (ONN) sequence is applied to a stacked-gate flash memory cell, in which writing and erasing are carried out by Fowler-Nordheim tunneling at a drain and at a channel, respectively. The writing, erasing, endurance, disturbance and retention characteristics of the memory cells with ONN tunnel films are, for the first time, compared to those of the memory cells with conventional tunnel films such as dry oxide, N_2O-oxynitride and reoxidized nitrided oxide tunnel films. No significant difference of the writing and erasing characteristics was observed among the memory cells with the various tunnel films. However, the amount of V_<th> window narrowing in the endurance characteristics of the memory cells with ONN (-12.9%) and reoxidized nitrided oxide (-11.4%) tunnel films were much smaller than those of the memory cells with RTO (-34.0%) and NO (-38.2%) after l0^6 write/erase cycles. Furthermore, the decrease in V_<th> in the drain disturbance characteristics of the memory cells with ONN tunnel films (21.2%) after weak electron-ejecting stress of 1O^5 cycles was smaller than those of the memory cells with the other films (51.4-64.4%). The retention characteristics of the memory cells with ONN tunnel films under the thermal stress of 2OO℃, 5.9 × 1O^5 sec were superior (ΔV_<th>=-2.1%) to those of the memory cells with the other films (ΔV_<th>=-5.4--8.2%). The reasons of these findings are because ONN films exhibit smaller number of charge traps and interface states induced by write/erase cycle stress, and suppress leakage current stimulated by the weak electron-ejecting bias and the thermal stress, compared to the dry oxide, the N_2O-oxynitride and the reoxidized nitrided oxide. ONN films are found to be suitable for use as tunnel films of flash memory cells.
- 社団法人電子情報通信学会の論文
- 1996-06-25
著者
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林 卓
Department Of Materials Science Shonan Institute Of Technology
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Hayashi Takahisa
Vlsi Research & Development Center Oki Electric Industry Co Ltd.
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Hayashi Takafumi
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Hayashi Takayoshi
Advanced Research Institute For Science And Engineering Waseda University
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Arakawa Tomiyuki
Vlsi Research & Development Center Oki Electric Industry Co. Ltd.
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Matsumoto Ryoichi
Lsi Process Technology Division Oki Electric Industry Co. Ltd.
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ARAKAWA Tomiyuki
VLSI R & D Center
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