Highly Reliable Flash Memories Fabricated by in-situ Multiple Rapid Thermal Processing (Special Section on High Speed and High Density Multi Functional LSI Memories)
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概要
- 論文の詳細を見る
We propose, for the first time, highly reliable flash-type EEPROM cell fabrication using in-situ multiple rapid thermal processing (RTP) technology. In this study, rapid thermal oxynitridation tunnel oxide (RTONO) film formations followed by in-situ arsenic (As)-doped floating-gate polysilicon growth by rapid thermal chemical vapor deposition (RTCVD) technologies are fully utilized. The results show that after 5×10^4 program/erase (P/E) endurance cycles, the conventional cell shows 65 narrowing of the threshold voltage (V_t) window, whereas the RTONO cell indicates narrowing of less than 20. A large number of nitrogen atoms (≳10^<20>atoms/cm^3) are confirmed by secondary ion mass spectrometry (SIMS), pile up at the SiO_2/Si interface and distribute into bulk SiO_2. It is considered that in the RTONO film stable Si-N bonds are formed which minimize electron trap generation as well as the neutral defect density, resulting in lower V_t shifts in P/E stress. In addition, the RTONO film reduces the number of hydrogen atoms because of final N_2O oxynitridation. The SIMS data shows that by the in-situ RTCVD process As atoms (9×10^<20> atoms/cm^3) are incorporated uniformly into 1000-A^^.-thick film. Moreover, the RTCVD polysilicon film indicates an extremely flat surface. The time-dependent dielectric breakdown (TDDB) characteristics of interpoly oxide-nitride-oxide (ONO) film exhibited no defect-related breakdown and 5 times longer break-down time as compared to phosphorus-doped polysilicon film. Therefore, the flash-EEPROM cell fabricated has good charge storing capability.
- 社団法人電子情報通信学会の論文
- 1994-08-25
著者
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林 卓
Department Of Materials Science Shonan Institute Of Technology
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Hayashi Takafumi
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Hayashi Takayoshi
Advanced Research Institute For Science And Engineering Waseda University
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Fukuda H
Ntt Microsystem Integration Laboratories
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Uchiyama Akira
Lsi Process Technology Division Oki Electric Industry Co. Ltd.
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Hayashi Takahisa
the Semiconductor Technology Laboratory, OKI Electric Industry Co., Ltd.
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Kawazu Yoshiyuki
the Semiconductor Technology Laboratory, OKI Electric Industry Co., Ltd.
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Uchiyama Akira
the LSI Process Technology Division, OKI Electric Industry Co., Ltd.
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Fukuda Hisashi
the Semiconductor Technology Laboratory, OKI Electric Industry Co., Ltd.
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Fukuda Hisashi
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.:(present Address)department Of El
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Kawazu Yoshiyuki
The Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
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