Optimization of the Amorphous Layer Thickness and the Junction Depth in the Preamorphization Method for Shallow-Junction Formation
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-02-20
著者
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NISHIKAWA Satoshi
Semiconductor Tech. Lab., Oki Electric Industry Co., Ltd.
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Tanaka Akira
Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.
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Nishikawa Satoshi
Semiconductor Tech. Lab. Oki Electric Industry Co. Ltd.
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IWABUCHI Toshiyuki
Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.,
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Iwabuchi Toshiyuki
Research And Development Group Oki Electric Industry Co. Ltd.
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Uchiyama Akira
Lsi Process Technology Division Oki Electric Industry Co. Ltd.
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YAMAJI Tetuo
Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.
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UCHIYAMA Akira
Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.
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HAYASHI Takahisa
Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.
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Yamaji Tetuo
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
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IWABUCHI Toshiyuki
Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.
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