MOS Gate Etching Using an Advanced Magnetron Etching System
スポンサーリンク
概要
- 論文の詳細を見る
A new type of magnetron etching system, RAMRIE, has been developed. Its characteristics for poly-Si gate etching with Cl2 has been investigated as a function of RF power and etching pressure in comparison with those for RIE whose structure and operating conditions are the same as those of RAMRIE. It was found that the profile of etched poly-Si is determined only by the etch selectivity of poly-Si to SiO2 ($S_{\text{SiO}}$) and that the pattern profile changes from an overhung shape to an undercut shape with increasing $S_{\text{SiO}}$ for both systems. Good anisotropy was obtained with RAMRIE when $S_{\text{SiO}}$ is about 20, which is two times as large as that with RIE. Under this condition, a 0.2 $\mu$m gate pattern was successfully delineated with RAMRIE. The characteristics of MOS capacitors prepared with RAMRIE and RIE have also been studied, but no etching-induced damage has been observed.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-11-20
著者
-
Ohno Seigo
Semiconductor Technology Laboratory Oki Electric Industry Co .ltd.
-
Nishikawa Satoshi
Semiconductor Tech. Lab. Oki Electric Industry Co. Ltd.
-
Noda Shuichi
Semiconductor Technology Laboratory Oki Electric Industry Co .ltd.
-
Ohno Seigo
Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd., 550-5 Higashiasakawa, Hachioji, Tokyo 193
関連論文
- Improvement of the Interface between Selectively Deposited Aluminum and Silicon by Annealing
- Modeling of Mechanism of Leakage in a Shallow p^+/n Junction Formed by Preamorphization
- Characterizing Metal-Oxide Semiconductor Structures Consisting of HfSiO_x as Gate Dielectrics using Monoenergetic Positron Beams
- Effect of Gate Materials on Generation of Interface State by Hot-Carrier Injection
- Role of SiN Bond Formed by N_2O-Oxynitridation for Improving Dielectric Properties of Ultrathin SiO_2 Films
- Optimum Electrode Materials for Ta_2O_5 Capacitors for High- and Low-Temperature Processes
- Formation of c-Axis-Oriented Bi_4Ti_3O_ Films with Extremely Flat Surface by Spin-Coating
- Formation of c-Axis-Oriented Bi_4Ti_3O_ Films with Extremely Flat Surface by Spin-Coating
- Effect of W Film Stress on W-Gate MOS Characteristics
- Evaluation of Laser CVD Tungsten for Gete Electrode : Silicon Devices and Process Technologies(Solid State Devices and Materials 1)
- A Novel Clean Ti Salicide Process Using Grooved Gate Structure
- Optimization of the Amorphous Layer Thickness and the Junction Depth in the Preamorphization Method for Shallow-Junction Formation
- 5 nm Gate Oxide Grown by Rapid Thermal Processing for Future MOSFETs
- The Dielectric Reliability of Very Thin SiO_2 Films Grown by Rapid Thermal Processing : Silicon Devices and Process Technologies(Solid State Devices and Materials 1)
- MOS Gate Etching Using an Advanced Magnetron Etching System : Etching and Deposition Technology
- Thermal Stability of Interconnect of TiN/Cu/TiN Multilayered Structure
- A New Mechanism of Failure in Silicon p^+/n Junction Induced by Diffusion Barrier Metals
- Highly Reliable Thin Nitrided SiO_2 Films Formed by Rapid Thermal Processing in an N_2O Ambient
- Anomalously Enhanced Boron Diffusion in the Base of SiGe HBTs Induced by Phosphorus Implants into Polysilicon Emitters
- SiC/SiN Multilayer Membrane for X-Ray Mask Deposited by Low Pressure Chemical Vapor Deposition
- Self-Aligned SiGe HBTs with Doping Level Inversion Using Selective Epitaxy (Special Issue on Ultra-High-Speed IC and LSI Technology)
- Enhanced Boron Diffusion in the Base of SiGe HBTs Induced by Implants into Polysilicon Emitters
- Effects of Contact-Hole-Etching Damage on Aluminum Chemical Vapor Deposition
- Anomalously Enhanced Boron Diffusion in the Base of SiGe HBTs Induced by Phosphorus Implants into Polysilicon Emitters
- MOS Gate Etching Using an Advanced Magnetron Etching System