Highly Reliable Thin Nitrided SiO_2 Films Formed by Rapid Thermal Processing in an N_2O Ambient
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-12-20
著者
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Ohno Seigo
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
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Ohno Seigo
Semiconductor Technology Laboratory Oki Electric Industry Co. Lid.
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Ohno Seigo
Semiconductor Technology Laboratory Oki Electric Industry Co .ltd.
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FUKUDA Hisashi
Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.
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Arakawa Tomiyuki
Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.
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Arakawa Tomiyuki
Semiconductor Technology Laboratory Oki Electric Industry Co. Lid.
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Fukuda Hisashi
Semiconductor Technology Laboratory Oki Electric Industry Co. Lid.
関連論文
- Effect of Deuterium Anneal on SiO_2/Si(100) Interface Traps and Electron Spin Resonance Signals of Ultrathin SiO_2 Films
- Optical Second Harmonic Generation in Alternately Assembled Dye-Polyion Multilayers
- Novel Single-Step Rapid Thermal Oxynitridation Technology for Forming Highly Reliable Electrically Erasable Programmable Read-Only Memory Tunnel Oxide Films
- Kinetics of Rapid Thermal Oxidation of Silicon
- Role of SiN Bond Formed by N_2O-Oxynitridation for Improving Dielectric Properties of Ultrathin SiO_2 Films
- Effect of W Film Stress on W-Gate MOS Characteristics
- Evaluation of Laser CVD Tungsten for Gete Electrode : Silicon Devices and Process Technologies(Solid State Devices and Materials 1)
- 5 nm Gate Oxide Grown by Rapid Thermal Processing for Future MOSFETs
- The Dielectric Reliability of Very Thin SiO_2 Films Grown by Rapid Thermal Processing : Silicon Devices and Process Technologies(Solid State Devices and Materials 1)
- MOS Gate Etching Using an Advanced Magnetron Etching System : Etching and Deposition Technology
- Relationship between Nitrogen Profile and Reliability of Heavily Oxynitrided Tunnel Oxide Films for Flash Electrically Erasable and Programmable ROMs
- Highly Reliable Thin Nitrided SiO_2 Films Formed by Rapid Thermal Processing in an N_2O Ambient
- Preparation of Cross-Linked Ultrathin Films Based on Layer-by-Layer Assembly of Polymers
- Proposal of Integrated Light Emitting Device Array with Shift Register
- Two-Phase Drive Self-Scanning Light-Emitting Device (SLED) Using Coupling Diodes
- A Comparative Study of High-Field Endurance for NH_3Nitrided and N_2O-Oxynitrided Ultrathin SiO_2 Films (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- MOS Gate Etching Using an Advanced Magnetron Etching System