A Comparative Study of High-Field Endurance for NH_3Nitrided and N_2O-Oxynitrided Ultrathin SiO_2 Films (Special Issue on Sub-Half Micron Si Device and Process Technologies)

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概要

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• Two kinds of nitrided ultrathin (5〜10 nm) SiO_2 films were formed on the silicon (100) face using rapid thermal NH_3-nitridation (RTN) and rapid thermal N_2O-oxynitridation (RTON) technologies. The MOS capacitors with RTN SiO_2 film showed that by Fowler-Nordheim (F-N) electron injection, both electron trap density and low-field leakage increase by the NH_3-nitridation. In addition, the charge-to-breakdown (Q_<BD>) value decreases owing to NH_3-nitridation. By contrast, RTON SiO_2 films exhibited extremely low electron trap density, almost no increase of the leakage current, and large Q_<BD> value above 200 C / cm^2. The oxide film composition was evaluated by secondary ion mass spectroscopy (SIMS). The chemical bonding states were also examined by Fourier transform-infrared reflection attenuated total reflectance (FT-IRATR) and X-ray photoelectron spectroscopy (XPS) measurements. These results indicate that although a large number of nitrogen (N) atoms are incorporated by the RTN and RTON, only the RTN process generates the hydrogen-related species such as NH and SiH bounds in the film, whereas the RTON film indicates only SiN bonds in bulk SiO_2. From the dielectric and physical properties of the oxide films, it is considered that the oxide wearout by high-field stress is the result of the electron trapping process, in which anomalous leakage due to trapassisted tunneling near the injected interface rapidly increases, leading to irreversible oxide failure.

• 社団法人電子情報通信学会の論文
• 1993-04-25

著者

• Fukuda Hisashi

  Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.:(present Address)department Of El

• Fukuda Hisashi

  Semiconductor Technology Laboratory Oki Electric Industry Co. Lid.

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• 5 nm Gate Oxide Grown by Rapid Thermal Processing for Future MOSFETs
• The Dielectric Reliability of Very Thin SiO_2 Films Grown by Rapid Thermal Processing : Silicon Devices and Process Technologies(Solid State Devices and Materials 1)
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• Highly Reliable Thin Nitrided SiO_2 Films Formed by Rapid Thermal Processing in an N_2O Ambient
• A Comparative Study of High-Field Endurance for NH_3Nitrided and N_2O-Oxynitrided Ultrathin SiO_2 Films (Special Issue on Sub-Half Micron Si Device and Process Technologies)

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