Fukuda Hisashi | Semiconductor Technology Laboratory Oki Electric Industry Co. Lid.
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概要
関連著者
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Fukuda Hisashi
Semiconductor Technology Laboratory Oki Electric Industry Co. Lid.
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FUKUDA Hisashi
Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.
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Fukuda Hisashi
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.:(present Address)department Of El
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IWABUCHI Toshiyuki
Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.,
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Iwabuchi Toshiyuki
Research And Development Group Oki Electric Industry Co. Ltd.
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IWABUCHI Toshiyuki
Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.
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Ohno Seigo
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
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Ohno Seigo
Semiconductor Technology Laboratory Oki Electric Industry Co .ltd.
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Fukuda H
Hitachi Ltd. Kokubunji Jpn
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Ohno Shinji
Department Of Chemical Engineering & Technology Faculty Of Engineering Kyushu University
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Yasuda Makoto
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
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Ohno S
Semiconductor Tech. Lab. Oki Electric Industry Co. Lid.
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YASUDA Masaaki
Department of Bioscience and Biotechnology, Faculty of Agriculture, University of the Ryukyus
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Yasuda M
Department Of Bioscience And Biotechnology Faculty Of Agriculture University Of The Ryukyus
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林 卓
Department Of Materials Science Shonan Institute Of Technology
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Fukuda H
Ntt Microsystem Integration Laboratories
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Uchiyama Akira
Lsi Process Technology Division Oki Electric Industry Co. Ltd.
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HAYASHI Takahisa
Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.
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Arakawa Tomiyuki
Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.
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Arakawa Tomiyuki
Semiconductor Technology Laboratory Oki Electric Industry Co. Lid.
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OHDOMARI Iwao
School of Science and Engineering, Waseda University
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Kawarada Hiroshi
School Of Science And Engineering Waseda University
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Kawarada Hiroshi
School Of Science & Engineering Waseda University
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大泊 巌
早大理工
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Ohdomari Iwao
School Of Science And Engineering Waseda University
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Ohdomari Iwao
School Of Science And Engineering Waseda University:kagami-memorial Laboratory For Materials Science
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Ohno Morifumi
National Institute of Advanced Industrial Science and Technology
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Ohno Seigo
Semiconductor Technology Laboratory Oki Electric Industry Co. Lid.
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UENO Tomo
Faculty of Technology, Tokyo University of Agriculture and Technology
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Kawarada H
School Of Science And Engineering Waseda University
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Hayashi Takafumi
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Hayashi Takayoshi
Advanced Research Institute For Science And Engineering Waseda University
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大野 守史
沖セミコンダクター(株)
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Ueno T
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
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Ohno Morifumi
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
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UCHIYAMA Akira
Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.
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Matsumoto Ryoichi
LSI Process Technology Division, Oki Electric Industry Co., Ltd.
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Fukuda Hisashi
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
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Kawarada Hiroshi
Nanotechnology Research Center Waseda University
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大野 守史
静岡大学電子工学研究所
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Matsumoto Ryoichi
Lsi Process Technology Division Oki Electric Industry Co. Ltd.
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大野 守史
(株) ソルテック
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Ueno Tomo
Faculty Of Technology Tokyo University Of Agriculture And Technology
著作論文
- Effect of Deuterium Anneal on SiO_2/Si(100) Interface Traps and Electron Spin Resonance Signals of Ultrathin SiO_2 Films
- Novel Single-Step Rapid Thermal Oxynitridation Technology for Forming Highly Reliable Electrically Erasable Programmable Read-Only Memory Tunnel Oxide Films
- Kinetics of Rapid Thermal Oxidation of Silicon
- Role of SiN Bond Formed by N_2O-Oxynitridation for Improving Dielectric Properties of Ultrathin SiO_2 Films
- 5 nm Gate Oxide Grown by Rapid Thermal Processing for Future MOSFETs
- The Dielectric Reliability of Very Thin SiO_2 Films Grown by Rapid Thermal Processing : Silicon Devices and Process Technologies(Solid State Devices and Materials 1)
- Relationship between Nitrogen Profile and Reliability of Heavily Oxynitrided Tunnel Oxide Films for Flash Electrically Erasable and Programmable ROMs
- Highly Reliable Thin Nitrided SiO_2 Films Formed by Rapid Thermal Processing in an N_2O Ambient
- A Comparative Study of High-Field Endurance for NH_3Nitrided and N_2O-Oxynitrided Ultrathin SiO_2 Films (Special Issue on Sub-Half Micron Si Device and Process Technologies)