OHDOMARI Iwao | School of Science and Engineering, Waseda University

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概要

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著作論文

A Novel Process for Fabrication of Gated Silicon Field Emitter Array Taking Advantage of Ion Bombardment Retarded Etching
Hybridization of Deoxyribonucleic Acid and Immobilization of Green Fluorescent Protein on Nanostructured Organosilane Templates
Electron Beam Lithography on Organosilane Self-Assembled Monolayer Resist
Effect of Deuterium Anneal on SiO_2/Si(100) Interface Traps and Electron Spin Resonance Signals of Ultrathin SiO_2 Films
High-Resolution Electron Microscope Study of Silicon on Insulator Structure Grown by Lateral Solid Phase Epitaxy
Structural Study of PtSi/(111)Si Interface with High-Resolution Electron Microscopy
Probability of Atomic or Molecular Oxygen Species in Silicon Silicon Dioxide
Diffusion of Molecular and Atomic Oxygen in Silicon Oxide
Fabrication of Adenosine Triphosphate-Molecule Recognition Chip by Means of Bioluminous Enzyme Luciferase : Cross-Disciplinary Areas
Nonscalability of Alpha-Particle-Induced Charge Collection Area
Reverse-Mode Single Ion Beam Induced Charge (R-mode SIBIC) Imaging for the Test of Total Dose Effects in n-ch Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)
{111} Facet Formation during Lateral Solid-Phase Epitaxy of Silicon
Analysis of Interactions between Green Fluorescent Protein and Silicon Substrates Using Molecular Dynamics Simulations
Large-Scale Atomistic Modeling of Thermally Grown SiO_2 on Si(111) Substrate
Effects of Thermal History on Residual Order of Thermally Grown Silicon Dioxide
Novel Interatomic Potential Energy Function for Si, O Mixed Systems
Fabrication of ultrathin Si Channel Wall For Vertical Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (DG MOSFET) by Using Ion-Bombardment-Retarded Etching (IBRE)
Impact of Structural Strained Layer near SiO_2/Si Interface on Activation Energy of Time-Dependent Dielectric Breakdown
Dominant Role of Corner Holes in the Decomposition Process of Silicon Islands on Si(111) Surfaces
Consideration on the Quantitativeness of Reflection High Energy Electron Diffraction Intensity as a Tool to Monitor the Coverage of the Si(111) Surface by 7×7 Domains
High-Temperature Scanning Tunneling Microscopy (STM) Observation of Metastable Structures on Quenched Si (111) Surfaces
Influence of Near-Surface Defects in Si Induced by Reactive Ion Etching on the Electrical Properties of the Pt/n-Si Interface
Estimation of Spatial Extent of a Defect Cluster in Si Induced by Single Ion lrradiation
Single-Event Upset Test of Static Random Access Memory Using Single-Ion Microprobe
Site Dependence of Soft Errors Induced by Single-Ion Hitting in 64 kbit Static Random Access Memory (SRAM)
Low Temperature Synthesis of Extremely Dense and Vertically Aligned Single-Walled Carbon Nanotubes
Si Island Formation on Domain Boundaries Induced by Ar Ion Irradiation on High-Temperature Si(111)-7 × 7 Dimer-Adatom-Stacking Fault Surfaces
Anneal Behavior of Aluminum-Implanted Germanium
Interface Reaction of SiO_2 and GaAs during High-Temperature Heat-Treatments
Analysis of Atomic-Scale Structure of Microtwins in L-SPE Si by Modeling
Solid State Reaction of Mo on Cubic and Hexagonal SiC
Carrier Generation in Germanium Implanted with Aluminum at Room Temperature

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