NIWA Masaaki | ULSI Process Technology Development Center, Matsushita Electronics Corp.
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概要
関連著者
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NIWA Masaaki
ULSI Process Technology Development Center, Matsushita Electronics Corp.
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Niwa Masaaki
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Industrial Co.
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Niwa M
Matsushita Electronics Corp. Kyoto Jpn
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Harada Yoshinao
Ulsi Process Technology Development Center Matsushita Electronics Corporation
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Harada Yoshinao
Ulsi Process Technology Development Center Matsushita Electronics Corp.
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Niwa M
Ulsi Process Technology Development Center Matsushita Electronics Corp.
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Niwa M
Department Of Materials Science And Engineering Tokyo Denki University
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堀田 将
北陸先端科学技術大学院大学材料科学研究科
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YAMAMOTO Kazuhiko
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporatio
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NAGATOMI Takaharu
Department of Material and Life Science, Graduate School of Engineering, Osaka University
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Harada Y
Univ. Tokyo Tokyo Jpn
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NAGATOMI Takaharu
Faculty of Engineering, Osaka University
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SHIMIZU Ryuichi
Faculty of Engineering, Osaka University
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HORII Sadayoshi
Semiconductor Equipment System Laboratory, Hitachi Kokusai Electric Inc.
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Harada Y
Life Culture Department Seitoku University
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Souda R
National Institute For Research In Inorganic Materials
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Miya Hironobu
Semiconductor Equipment System Laboratory Hitachi Kokusai Electric Inc.
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ASAI Masayuki
Semiconductor Equipment System Laboratory, Hitachi Kokusai Electric Inc.
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Shimizu R
Department Of Information Science Osaka Institute Of Technology
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Shimizu R
Osaka Univ. Osaka Jpn
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Nagatomi T
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Shimizu Ryuichi
Faculty Of Engineering Osaka University
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Shimizu Ryuichi
Department of Information Processing, Osaka Institute of Technology
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OHDOMARI Iwao
School of Science and Engineering, Waseda University
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Ohdomari Iwao
School Of Science And Engineering Waseda University
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Eriguchi Koji
Ulsi Process Technology Development Center Matsushita Electronics
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WATANABE Takanobu
School of Science and Engineering, Waseda University
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Harada Yoshinao
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corp.
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Hayashi Shigenori
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corporation
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Hayashi Shigenori
Semiconductor Equipment System Laboratory Hitachi Kokusai Electric Inc.
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Hayashi Shigenori
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Industrial Co.
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Niwa Masaaki
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corp.
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Miya Hironobu
Semiconductor Equipment Division Hitachi Kokusai Electric Inc.
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KANEKO Isao
Specialty Chemicals Research Center, Shin-Etsu Chemical Co., Ltd.
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ISHIHARA Toshinobu
Specialty Chemicals Research Center, Shin-Etsu Chemical Co., Ltd.
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Horii Sadayoshi
Semiconductor Equipment System Laboratory Hitachi Kokusai Electric Inc.
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Kaneko Isao
Specialty Chemicals Research Center Shin-etsu Chemical Co. Ltd.
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Asai Masayuki
Semiconductor Equipment System Laboratory Hitachi Kokusai Electric Inc.
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Watanabe Takanobu
School Of Science And Engineering Waseda University
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Ishihara Toshinobu
Specialty Chemicals Research Center Shin-etsu Chemical Co. Ltd.
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Nima Masaaki
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics corp.
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Nagatomo Takaharu
Faculty of Engineering, Osaka University
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Eriguchi Koji
ULSI Process Tech. Dev. Ctr., Matsushita Electronics
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Yamamoto Kazuhiko
ULSI Process Technology Development Center, Matsushita Electric Industrial Co., Ltd.
著作論文
- Initial Stage of Oxidation of Si(001)-2 × Surface Studied by X-Ray Photoelectron Spectroscopy
- Initial Stage of Oxidation of Si(001)-2x1 Surface Studied by X-Ray Photoelectron Spectroscopy
- Impact of Structural Strained Layer near SiO_2/Si Interface on Activation Energy of Time-Dependent Dielectric Breakdown
- Metal-Organic Chemical Vapor Deposition of HfO_2 by Alternating Supply of Tetrakis-Diethylamino-Hafnium and Remote-Plasma Oxygen
- Metalorganic Chemical Vapor Deposition of HfO_2 Films through the Alternating Supply of Tetrakis(1-methoxy-2-methyl-2-propoxy)-Hafnium and Remote-Plasma Oxygen