Metal-Organic Chemical Vapor Deposition of HfO_2 by Alternating Supply of Tetrakis-Diethylamino-Hafnium and Remote-Plasma Oxygen
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-10-15
著者
-
堀田 将
北陸先端科学技術大学院大学材料科学研究科
-
YAMAMOTO Kazuhiko
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporatio
-
Niwa M
Matsushita Electronics Corp. Kyoto Jpn
-
NIWA Masaaki
ULSI Process Technology Development Center, Matsushita Electronics Corp.
-
Hayashi Shigenori
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corporation
-
Hayashi Shigenori
Semiconductor Equipment System Laboratory Hitachi Kokusai Electric Inc.
-
Hayashi Shigenori
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Industrial Co.
-
HORII Sadayoshi
Semiconductor Equipment System Laboratory, Hitachi Kokusai Electric Inc.
-
Niwa M
Ulsi Process Technology Development Center Matsushita Electronics Corp.
-
Niwa M
Department Of Materials Science And Engineering Tokyo Denki University
-
Niwa Masaaki
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Industrial Co.
-
Miya Hironobu
Semiconductor Equipment System Laboratory Hitachi Kokusai Electric Inc.
-
Miya Hironobu
Semiconductor Equipment Division Hitachi Kokusai Electric Inc.
-
ASAI Masayuki
Semiconductor Equipment System Laboratory, Hitachi Kokusai Electric Inc.
-
KANEKO Isao
Specialty Chemicals Research Center, Shin-Etsu Chemical Co., Ltd.
-
ISHIHARA Toshinobu
Specialty Chemicals Research Center, Shin-Etsu Chemical Co., Ltd.
-
Horii Sadayoshi
Semiconductor Equipment System Laboratory Hitachi Kokusai Electric Inc.
-
Kaneko Isao
Specialty Chemicals Research Center Shin-etsu Chemical Co. Ltd.
-
Asai Masayuki
Semiconductor Equipment System Laboratory Hitachi Kokusai Electric Inc.
-
Ishihara Toshinobu
Specialty Chemicals Research Center Shin-etsu Chemical Co. Ltd.
-
Yamamoto Kazuhiko
ULSI Process Technology Development Center, Matsushita Electric Industrial Co., Ltd.
関連論文
- Low-Temperature Preparation of Pb(Zr,Ti)O_3 Thin Filmson (Pb,La)TiO_3 Buffer Layer by Multi-Jon-Beam Sputtering
- Preparation of Pb-Based Ferroelectric Thin Films at Room Temperature Using Excimer-Laser-Assisted Multi-Ion-Beam Sputtering
- Preparation of La-Modified Lead Titanate Thin Films by Rf-Magnetron Sputtering Method and Their Pyroelectric Properties
- Preparation of Pyroelectric Pb_La_xTi_O_3 Thin Films from Ceramic Target by RF Magnetron Sputtering
- Characterization of Pb(Zr, Ti)O_3 Thin Films Prepared by Multi-Ion-Beam Sputtering
- Substrate Potential Effects on Low-Temperature Preparation of SrTiO_3 Thin Films by RF Magnetron Sputtering
- Ferroelectric PbTiO_3 Thin Films Prepared by Multi-Ion-Beam Sputter and Ion-Assisted Deposition
- 直線偏光Nd:YAGレーザーによる規則性配列微細Siドットの形成(半導体Si及び関連材料・評価)
- Periodic Grain-Boundary Formation in a Poly-Si Thin Film Crystallized by Linearly Polarized Nd: YAG Pulse Laser with an Oblique Incident Angle
- Analysis on Operation of a F-FET Memory With an Intermediate Electrode
- Increase of Dielectric Constant of an Epitaxial (100) Yttria-Stabilized Zirconia Film on (100) Si Substrate Deposited by Reactive Sputtering in the Metallic Mode : Surfaces, Interfaces, and Films
- Alignment of Grain Boundary in a Si film Crystallized by a Linearly Polarized Laser Beam on a Glass Substrate
- HF+ヒドラジン溶液処理をしたエピタキシャル(100)ZrN/(100)Si構造上への(100)Ir薄膜の作製
- 高コヒーレント直線偏光パルスレーザービームによる結晶化Si薄膜の粒界位置制御
- Low Temperature Heteroepitaxial Growth of a New Phase Lead Zirconate Titanate Film on Si Substrate with an Epitaxial(ZrO_2)_(Y_2O_3)_x Buffer Layer
- エピタキシャルZrN膜/(100)Si基板上に形成したPZT薄膜の強誘電体特性
- エピタキシャルZrN薄膜/(100)Si基板上に形成したPZT薄膜の強誘電体特性
- (100)YSZ/(100)Si基板構造上にスパッタ法により形成したヘテロエピタキシャル(100)Ir及び(001)PZT薄膜の膜質特性
- (100)YSZ/(100)Si基板構造上にスパッタ法により形成したヘテロエピタキシャル(100)Ir及び(001)PZT薄膜の膜質特性
- スパッタ法によるシリコン基板上へのPb(Zr,Ti)O_3(PZT)薄膜のヘテロエピタキシャル成長
- Material Properties of Heteroepitaxial Ir and Pb (Zr_xTi_) O_3 Films on (100) (ZrO_2)_(Y_2O_3)_x/(100) Si Structure Prepared by Sputtering
- 反応性スパッタ法によるSi基板上へのY組成制御YSZ薄膜のヘテロエピタキシャル成長
- Characterization of Pb(Zr_xTi_)O_3 Thin Film on Silicon Substrate with Heteroepitaxial Yttria-Stabilized Zirconia (YSZ) Buffer Layer
- Low Voltage Saturation of Ob(Zr_xTi_O_3 Films on(100)Ir/(100)(ZrO_2)_(Y_2O_3)_x/(100)Si Substrate Structure Prepared by Reactive Sputtering
- Extendibility of Ta_2O_5 Metal-Insulator-Metal Capacitor Using Ru Electrode
- Ru-Ta_2O_5MIM Capacitor toward 0.1μm DRAM Cell
- Determination of Material Thermal Properties Using Photoacoustic Signals Detected by a Transparent Transducer
- Analysis of Pyroelectric Signal in Photoacoustic Spectroscopy Using a Transparent Transducer
- Influence of Piezoelectric and Pyroelectric Effects on Signal of PAS Using a Transparent Transducer : Photoacoustic Spectroscopy and Ultrasonic Imaging
- Theoretical Analysis of Photoacoustic Signal on PAS Using a Transparent Transducer : Photoacoustic Effect and Spectroscopy
- Consideration on PA Signals of Multilayer Structure Measured by PAS Using Transparent Transducer : Photoacoustic Spectroscopy
- High-Critical-Current-Density Epitaxial Films of SmBa_2Cu_3O_ in High Fields
- Reduction of Surface Resistance of ErBa_2Cu_3O_ Films by BaZrO_3 Nano-Particle Inclusion
- Tri-axial Grain Orientation of Y_2Ba_4Cu_7O_y Achieved by the Magneto-science Method
- Rare-Earth-Dependent Magnetic Anisotropy in REBa_2Cu_3O_y
- Ni_Co_x-C Nanogranular Thin Films Prepared by a Co-S puttering Method:Improvement in Magnetic Properties by Optimizing the Alloy Ratio : Magnetism
- Internal Photoemission from Ag Nanoparticles Embedded in Al_2O_3 Film : Surfaces, Interfaces, and Films
- Thin Films of Carbon Nanocapsules and Onion-Like Graphitic Particles Prepared by the Cosputtering Method
- Substrate Temperature Dependence of Deuteron Bonding States in Deuterated Amorphous Silicon Studied by ^2H Nuclear Magnetic Resonance
- ^1H Nuclear Magnetic Resonance Study of Hydrogen Distribution in Partially Deuterated Hydrogenated Amorphous Silicon
- ^P Nuclear Magnetic Resonance Study of Local Bonding Configuration of Phosphorus in Amorphous Silicon-Hydrogen-Phosphorus Alloys
- Silicon-29 Nuclear Magnetic Resonance Study of Amorphous-Microcrystalline Mixed-Phase Hydrogenated Silicon
- ^1H Nuclear Magnetic Resonance Study of Hydrogenated Amorphous Silicon Deposited from a Xe-diluted Silane Plasma
- High pressure water vapor annealing for improving HfSiO dielectrics properties
- Moire Fringe Analysis of BaZrO_3 Nanorods in ErBa_2Cu_3O_ Films
- Critical Current Density Enhancement around a Matching Field in ErBa_2Cu_3O_ Films with BaZrO_3 Nano-Rods
- Dielectric Breakdown of Polyacetylene
- Preparation of PbTiO_3 Thin Films by Ion- and Photoassisted Evaporation
- Preparation and Characterization of Pb-Based Ferroelectric Thin Films : Thin Films
- Initial Stage of Oxidation of Si(001)-2 × Surface Studied by X-Ray Photoelectron Spectroscopy
- Initial Stage of Oxidation of Si(001)-2x1 Surface Studied by X-Ray Photoelectron Spectroscopy
- Impact of Structural Strained Layer near SiO_2/Si Interface on Activation Energy of Time-Dependent Dielectric Breakdown
- Dislocation Density and Critical Current Density of Sm_Ba_Cu_3O_y Films Prepared by Various Fabrication Processes
- c-Axis-Correlated Vortex Pinning Center Induced by Dilute Co-doping in Pulsed-Laser-Deposition-ErBa_2Cu_3O_y Films
- Enhancement of Flux-Pinning in Epitaxial Sm_Ba_Cu_3O_y Films by Introduction of Low-T_c Nanoparticles
- High-Critical-Current-Density SmBa_2Cu_3O_ Films Induced by Surface Nanoparticle
- Hetero-Epitaxial Growth of CeO_2 Films on MgO Substrates
- Critical Current Control in YBa_2Cu_3O_ Films Using Artificial Pinning Centers
- Anisotropy and Lorentz-Force Dependences of Critical Current Density in C-Axis-Oriented YBa_2Cu_3O_ Thin Film
- Enhancement of Critical Current Density in ErBa_2Cu_3O_y Thin Films by Post-Annealing
- Evaluation of Multilayer Structure and Depth Profile by PAS Using a Transparent Transducer : Photoacoustic Spectroscopy
- Evaluation of Ion Implantation into Silicon Photoacoustic Spectroscopy using Transparent Transducer Method : Photoacoustic Spectroscopy
- Improving High-κ Gate Dielectric Properties by High-Pressure Water Vapor Annealing
- Thickness Dependence of Material Properties of Epitaxial Pb(Zr_xTi_)O_3 Films on Ir/(100) (ZrO_2)_(Y_2O_3)_x(100)Si Structures
- New Series of Nickel-Based Pnictide Oxide Superconductors (Ni_2Pn_2)(Sr_4Sc_2O_6) (Pn = P, As)
- Dramatic Change in Magnetization Behaviors of La_Sr_Mn_2O_ by Control of Excess Oxygen
- Thermoelectric Performance of Magnetically c-Axis Aligned Ca-based Cobaltites
- Electrical Transport and Electron Spin Resonance in Electron-Beam-Irradiated Polyacetylene in the Presence of SF_6 Gas
- SiO_2/Si Interfaces Studied by STM and HRTEM(II) : Etching and Deposition Technology
- SiO_2/Si Interfaces Studied by STM and HRTEM (II)
- Compound-Source Molecular Beam Epitaxy for ZnCdSe/ZnSSe/ZnMgSSe Laser Structure
- Metal-Organic Chemical Vapor Deposition of HfO_2 by Alternating Supply of Tetrakis-Diethylamino-Hafnium and Remote-Plasma Oxygen
- Metalorganic Chemical Vapor Deposition of HfO_2 Films through the Alternating Supply of Tetrakis(1-methoxy-2-methyl-2-propoxy)-Hafnium and Remote-Plasma Oxygen
- Enhancement of Electrical Conductivity of Polyacetylene by Electron Beam Irradiation in the Presence of Dopant
- Photoluminescence of Polyacetylene in Near Infrared
- Optical Absorption of Yba_2Cu_3O_ and ErBa_2Cu_3O_ Crystals due to Interband Transition : Electrical Properties of Condensed Matter
- Optical Reflectivity of Single Crystals of YBa_2Cu_3O_ and ErBa_2Cu_3O_
- Terminating Structure of Plasma-Assisted Molecular Beam Epitaxial GaN{0001} Film Surface Identified by Coaxial Impact Collision Ion Scattering Spectroscopy
- Identification of Surface Atoms of LiGaO_2(001) Substrate for Hexagonal GaN Film by Coaxial Impact Collision Ion Scattering Spectroscopy
- Superconducting Bi_2Sr_2CaCu_2O_ Single Films Grown on SrTiO_3 Substrate by the Liquid Phase Epitaxial Method
- Preparation of Single Crystals Containing the High-T_c (above 100 K) Phase of a Bi-Sr-Ca-Cu-O Superconductor
- Synthesis and Decomposition of the High-T_c Phase of a Pb-Doped Bi-Sr-Ca-Cu-O Superconductor
- A New Method for Improving the Superconducting Transition Temperature of Platy ErBa_2Cu_3O_ Single Crystals
- Growth of YBa_2Cu_3O_ Single Crystals from the High Temperature Solution
- Growth of (La_Sr_x)_2CuO_ Crystals from High Temperature Solution
- Optimization of Single Crystal Preparation of Bi_2Sr_2CaCu_2O_x Superconductor by the Travelling Solvent Floating Zone Method
- Effect of Nitrogen on Electrical and Physical Properties of Polyatomic Layer Chemical Vapor Deposition HfSi_xO_y Gate Dielectrics
- Atomic-scale Characterization and Control of the HfO_2/Si(001) Interface
- Contact Hole Etch Scaling toward 0.1 μm
- Spatial and Temporal Behavior of Radicals in Inductively Coupled Plasm for SiO_2 Etching
- Characterization of GdBa_2Cu_3O_ Thin Films by Raman Scattering
- Investigation of Heat-Treating Conditions for Silver-Sheathed Bi2212 Superconducting Coils
- 異方的電荷を持った層状XY格子モデルにおける超伝導相転移の三重臨界点II
- 異方的電荷を持った層状XY格子モデルにおける超伝導相転移の三重臨界点I
- 強磁性体-超伝導体-強磁性体接合を利用した新しい単一磁束量子デバイスの考案
- Novel Fabrication Method of Si Nanostructures Using Atomic Force Microscope (AFM) Field-Enhanced Oxidation and Anisotropic Wet Chemical Etching
- Fabrication of Novel Si Double-Barrier Structures and Their Characteristics
- Fabrication of Silicon Quantum Wires and Dots (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
- Local Ordering and Lateral Growth of Initial Thermal Oxide of Si(001)
- The Initial Stages of the Thermal Oxidation of Si(001)2×1 Surface Studied by Scanning Tunneling Microscopy