強磁性体-超伝導体-強磁性体接合を利用した新しい単一磁束量子デバイスの考案
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概要
- 論文の詳細を見る
- 1997-02-15
著者
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Niwa M
Matsushita Electronics Corp. Kyoto Jpn
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Niwa M
Ulsi Process Technology Development Center Matsushita Electronics Corp.
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Niwa M
Department Of Materials Science And Engineering Tokyo Denki University
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Niwa Masaaki
Department Of Electrical Engineering Faculty Of Technology Kanazawa University
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SHINOHARA Shozo
Department of Materials Science and Engineering, Tokyo Denki University
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YONEDA Morishige
Department of Electric Engineering, Nippon Electric College
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Yoneda M
Department Of Electric Engineering Nippon Electric College
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Shinohara S
Department Of Materials Science And Engineering Tokyo Denki University
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Shinohara Shozo
Department Of Materials Science And Engineering Tokyo Denki University
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Yoneda Morishige
Department Of Electric Engineering Nippon Electric College
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- ゲージ場を介した転位線と超伝導秩序パラメータの相互作用
- 異方的電荷を持った層状XY格子モデルにおける超伝導相転移の三重臨界点II
- 異方的電荷を持った層状XY格子モデルにおける超伝導相転移の三重臨界点I
- 強磁性体-超伝導体-強磁性体接合を利用した新しい単一磁束量子デバイスの考案
- Novel Fabrication Method of Si Nanostructures Using Atomic Force Microscope (AFM) Field-Enhanced Oxidation and Anisotropic Wet Chemical Etching
- Fabrication of Novel Si Double-Barrier Structures and Their Characteristics
- Fabrication of Silicon Quantum Wires and Dots (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
- Local Ordering and Lateral Growth of Initial Thermal Oxide of Si(001)
- The Initial Stages of the Thermal Oxidation of Si(001)2×1 Surface Studied by Scanning Tunneling Microscopy
- The Shielding of a Fixed Charge in a Metal
- 異方的電荷を持った層状XY格子モデルの双対変換II
- 異方的電荷を持った層状XY格子モデルの双対変換I