The Initial Stages of the Thermal Oxidation of Si(001)2×1 Surface Studied by Scanning Tunneling Microscopy
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概要
- 論文の詳細を見る
The initial stages of the thermal oxidation of Si(001)2×1 surface were studied by scanning tunneling microscopy. The O_2 exposure at 600℃ produced Si islands and initial oxides. The oxides appeared as "dark sites", "sequence of dots", and "dots with dark surroundings". Among the oxides, most of the "dark sites" were removed by successive heating at 600℃, while the "sequence of dots" and the "dots with dark surroundings" remained. All the oxides were removed by successive heating at 800℃. The thermal oxidation of Si(001)2×1 surface is discussed in terms of these sites.
- 社団法人応用物理学会の論文
- 1993-01-30
著者
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Niwa M
Matsushita Electronics Corp. Kyoto Jpn
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Niwa M
Ulsi Process Technology Development Center Matsushita Electronics Corp.
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Niwa M
Department Of Materials Science And Engineering Tokyo Denki University
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Niwa Masaaki
Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.
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UDAGAWA Masaharu
Semiconductor Research Center Matsushita Electric Ind. Co., Ltd.
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SUMITA Isao
Matsushita Research Institute Tokyo, Inc.
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Sumita I
Matsushita Research Institute Tokyo Inc.
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Sumita Isao
Matsushita Research Institute Tokyo Inc.
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Udagawa M
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Udagawa Masaharu
Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.
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