Scanning Tunneling Microscope Observation of Si(111) δ7×7 Formed by Si Deposition

スポンサーリンク

概要

• 論文の詳細を見る

• Using scanning tunneling microscopy (STM), we study the initial stage of silicon deposition on Si(111)7×7 at room temperature. At less than 0.1 monolayer, three kinds of adsorbed structures are observed. The most common (70%) is a structure which has four maxima around a center dimer in its STM image. The position of the protrusions observed by STM changes drastically in the empty and the filled state. The bias voltage dependence is explained by the molecular orbitals between sp^3 bonds which are formed upon the breaking of backbonds of adatoms. Based on the measured diffusion length on the surface, the molecular beam is also analyzed. Si_2 is suggested to sublimate from the resistivity-heated Si source.

• 1994-06-30

著者

• Sumita Isao

  Matsushita Research Institute Tokyo Inc.

• Yokoyama Takashi

  Matsushita Research Institute Tokyo Inc.

• TANAKA Hideyuki

  Matsushita Research Institute Tokyo, Inc.

• Tanaka Hideyuki

  Matsushita Research Institute Tokyo Inc.

関連論文

• Scanning Tunneling Microscope Observation of Si(111) δ7×7 Formed by Si Deposition
• Atomic-Scale Planarization of 6-Inch Si(001) Substrate by UHV Heating
• Local Ordering and Lateral Growth of Initial Thermal Oxide of Si(001)
• The Initial Stages of the Thermal Oxidation of Si(001)2×1 Surface Studied by Scanning Tunneling Microscopy

スポンサーリンク