Atomic-Scale Planarization of 6-Inch Si(001) Substrate by UHV Heating

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概要

• 論文の詳細を見る
• 1995-08-21

著者

• Idota Ken

  Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.

• Idota Ken

  Semiconductor Device Group Advanced Devices Development Center Matsushita Electric Industrial Co. Lt

• Niwa Masaaki

  Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.

• SUMITA Isao

  Matsushita Research Institute Tokyo, Inc.

• Sumita Isao

  Matsushita Research Institute Tokyo Inc.

関連論文

• Base Current Control in Low-V_-Operated SiGeC Heterojunction Bipolar Transistors Using SiGe-Cap Structure and High-Carbon-Content Base
• Atomic-Order Planarization of Ultrathin SiO_2/Si(001) Interfaces
• Scanning Tunneling Microscope Observation of Si(111) δ7×7 Formed by Si Deposition
• Atomic-Scale Planarization of 6-Inch Si(001) Substrate by UHV Heating
• SiO_2/Si Interfaces Studied by STM
• Novel Fabrication Method of Si Nanostructures Using Atomic Force Microscope (AFM) Field-Enhanced Oxidation and Anisotropic Wet Chemical Etching
• Fabrication of Novel Si Double-Barrier Structures and Their Characteristics
• Local Ordering and Lateral Growth of Initial Thermal Oxide of Si(001)
• The Initial Stages of the Thermal Oxidation of Si(001)2×1 Surface Studied by Scanning Tunneling Microscopy

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