Fabrication of Novel Si Double-Barrier Structures and Their Characteristics
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概要
- 論文の詳細を見る
A novel Si (silicon)-based double-barrier structure (DBS) is newly proposed to study Si resonant tunneling devices. To form a thin Si single-crystal plate as a quantum well, anisotropic wet chemical etching and thermal oxidation are adopted. The DBS has a 43 nm-wide Si quantum well and 2.3 nm-thick SiO_2 barriers. The electrical characteristic exhibits negative differential conductance (NDC).
- 社団法人応用物理学会の論文
- 1995-02-28
著者
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Niwa M
Matsushita Electronics Corp. Kyoto Jpn
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Niwa M
Ulsi Process Technology Development Center Matsushita Electronics Corp.
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Niwa M
Department Of Materials Science And Engineering Tokyo Denki University
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Niwa Masaaki
Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.
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Yuki Koichro
Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.
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Inoue Kaoru
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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Hirai Yoshihiko
College Of Engineering Osaka Prefecture Univirsity
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HIRAI Yoshihiko
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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Yuki Koichiro
Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Morimoto Kiyoshi
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Yasui Juro
Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd.
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Inoue Kaoru
Semiconductor Laboratory Matsushita Electric Industrial Co. Ltd.
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Hirai Yoshihiko
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Yasui Juro
Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.
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Inoue Kaoru
Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.
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