Bandgap and Strain Engineering in SiGeC Heterojunction Bipolar Transistors
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-04-01
著者
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Kubo M
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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Kubo Masahiro
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Toyoda Kenji
Advanced Technology Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Kubo Minoru
Advanced Technology Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Saitoh T
Faculty Of Technology Tokyo University Of Agriculture And Technology
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KANZAWA Yoshihiko
Advanced Technology Research Laboratories, Matsushita Electric Co., Ltd.
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NOZAWA Katsuya
Advanced Technology Research Laboratories, Matsushita Electric Co., Ltd.
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YUKI Koichiro
Advanced Technology Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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TAKAGI Takeshi
Advanced Technology Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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SAITOH Toru
Advanced Technology Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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Saitoh T
Semiconductor Device Group Advanced Devices Development Center Matsushita Electric Industrial Co. Lt
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Kubo M
Advanced Technology Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Nozawa K
Advanced Technology Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Yuki Koichiro
Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Kanzawa Yoshihiko
Semiconductor Device Group Advanced Devices Development Center Matsushita Electric Industrial Co. Lt
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Takagi Takeshi
Semiconductor Device Group Advanced Devices Development Center Matsushita Electric Industrial Co. Lt
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