Base Current Control in Low-V_<BE>-Operated SiGeC Heterojunction Bipolar Transistors Using SiGe-Cap Structure and High-Carbon-Content Base
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-30
著者
-
Saitoh T
Faculty Of Technology Tokyo University Of Agriculture And Technology
-
SAITOH Tohru
Semiconductor Group, Advanced Technology Research Laboratories, Matsushita Electric Industrial Co. L
-
Saitoh T
Semiconductor Device Group Advanced Devices Development Center Matsushita Electric Industrial Co. Lt
-
KAWASHIMA Takahiro
Semiconductor Device Group, Advanced Devices Development Center, Matsushita Electric Industrial Co.,
-
KANZAWA Yoshihiko
Semiconductor Device Group, Advanced Devices Development Center, Matsushita Electric Industrial Co.,
-
SATO (IWANAGA)
Semiconductor Device Group, Advanced Devices Development Center, Matsushita Electric Industrial Co.,
-
IDOTA Ken
Semiconductor Device Group, Advanced Devices Development Center, Matsushita Electric Industrial Co.,
-
TAKAGI Takeshi
Semiconductor Device Group, Advanced Devices Development Center, Matsushita Electric Industrial Co.,
-
OHNISHI Teruhito
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
-
YUKI Koichiro
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
-
SANO Tsuneichiro
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
-
SAWADA Shigeki
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
-
Idota Ken
Semiconductor Device Group Advanced Devices Development Center Matsushita Electric Industrial Co. Lt
-
Sato (iwanaga)
Semiconductor Device Group Advanced Devices Development Center Matsushita Electric Industrial Co. Lt
-
Yuki Koichiro
Semiconductor Company Matsushita Electric Industrial Co. Ltd.
-
Kanzawa Yoshihiko
Semiconductor Device Group Advanced Devices Development Center Matsushita Electric Industrial Co. Lt
-
Sato-Iwanaga Junko
Semiconductor Device Group, Advanced Devices Development Center, Matsushita Electric Industrial Co.,
-
Ohnishi Teruhito
Semiconductor Company Matsushita Electric Industrial Co. Ltd.
-
Sawada Shigeki
Semiconductor Company Matsushita Electric Industrial Co. Ltd.
-
Sano Tsuneichiro
Semiconductor Company Matsushita Electric Industrial Co. Ltd.
-
Kawashima Takahiro
Semiconductor Device Group Advanced Devices Development Center Matsushita Electric Industrial Co. Lt
-
Takagi Takeshi
Semiconductor Device Group Advanced Devices Development Center Matsushita Electric Industrial Co. Lt
-
Saitoh Tohru
Semiconductor Device Group, Advanced Devices Development Center, Matsushita Electric Industrial Co., Ltd.
関連論文
- 904 レーザーアブレーションを利用したクラスター生成装置におけるレーザー誘起衝撃波の解析
- 18pTD-9 時空間局在型クラスター源SCCSによるサイズ制御シリコンクラスター生成
- 時空間局所閉じ込め型クラスタービーム源の開発
- 24pYN-2 シリコンクラスタービーム生成における分光分析
- 24pA-4 内部状態の揃ったクラスター生成源の開発(II)
- 26pB-4 内部状態を規定したクラスター生成源の開発
- 26pB-3 シリコンクラスターイオンの後方散乱実験
- 28a-S-8 ショック波を利用したレーザー蒸発型クラスター生成の原理
- 28a-S-2 高精度クラスター実験のための20KeV原子クラスターイオン生成
- 27p-Q-12 デンドリマー分子の長時間エネルギー貯蔵の可能性
- 28pXD-12 超音速シリコンクラスタービーム a-C 及び金属表面デポジッション
- Effect of Organic Phase on Dynamic and Collective Behavior of Surfactants at Liquid/Liquid Interfaces by a Time-Resolved Quasi-Elastic Laser-Scattering Method
- Thermal Lens Microscope
- Picosecond Energy Transfer at Gold/Electrolyte Interfaces Using Transient Reflecting Grating Method under Surface Plasmon Resonance Condition
- Analysis of Serum Proteins Adsorbed to a Hemodialysis Membrane of Hollowfiber Type by Thermal Lens Microscopy
- Direct Measurements of Femtosecond Energy Dissipation Processes of Hot Electrons in a Gold Film
- 31a-ZH-9 フェムト秒過渡反射格子法によるAu薄膜内ホットエレクトロンの輸送現象
- 分析化学の進歩(7)光熱変換分光法--生体関連物質の高感度分析への応用
- 28p-XK-6 高速クラスターイオン後方散乱によるクラスター構造解析の原理
- 長谷川佐一事務局長のご退任によせて
- 会長挨拶
- Photoemission and X-Ray Absorption Study of La_Sr_xMnO_3
- Investigation of Hydrogenated Amorphous Silicon Germanium Fabricated under High Hydrogen Dilution and Low Deposition Temperature Conditions for Stable Solar Cells
- Effect of Hydrogen-Radical Annealing for SiO_2 Passivation
- Highly Sensitive and Direct Detection of DNA Fragments Using a Laser-Induced Capillary Vibration Effect
- Fast Slab Gel Electrophoretic Separation of DNA Fragments with a Short Migration Distance Using Thermal Lens Microscope
- Molecular Transport between Two Phases in a Microchannel
- Integration of Flow Injection Analysis and Zeptomole-Level Detection of the Fe(II)-ο-Phenanthroline Complex
- Sub-Zeptomole Detection in a Microfabricated Glass Channel by Thermal-Lens Microscopy
- Preparation of Ge_Cy Alloys by C Implantation into Ge Crystal and Their Raman Spectra : Semiconductors
- Infrared Absorption Spectra of C Local Mode in Si_Ge_xC_y Crystals : Semiconductors
- Bandgap and Strain Engineering in SiGeC Heterojunction Bipolar Transistors
- Femtosecond Transient Reflecting Grating Methods and Analysis of the Ultrafast Carrier Dynamics on Si(111) Surfaces
- SiN_x:H/SiO_2 Double-Layer Passivation With Hydrogen-Radical Annealing For Solar Cells
- 1998年度日本分析化学会奨励賞受賞者 金田隆君
- 1998年度日本分析化学会技術功績賞受賞者 岡野寛君
- Photoluminescence of Si-Rich SiO_2 Films : Si Clusters as Luminescent Centers
- Electrical Properties of Regrowth ZnSe Homointerfaces Formed by Molecular Beam Epitaxy
- Base Current Control in Low-V_-Operated SiGeC Heterojunction Bipolar Transistors Using SiGe-Cap Structure and High-Carbon-Content Base
- Superior Pinch-Off Characteristics at 400℃ in AlGaN/GaN Heterostructure Field Effect Transistors
- Enhanced Electron Mobility in AlGaN/InGaN/AlGaN Double-Heterostructures by Piezoelectric Effect
- Strain Relaxation Processes in GaAs on Si by Two Groups of Misfit Dislocations
- Systematic Aspects of the Electronic Structure of 3d Transition-Metal Compounds
- Growth and Characterization of GaAs/GaSe/Si Heterostructures
- GaAs/AlAs and AlAs/GaAs Interface Formation Process Studied by Coaxial Impact-Collision Ion Scattering Spectroscopy: Comparison between Alternating and Simultaneous Source Supply
- In-Situ Characterization of Compound Semiconductor Surfaces by Novel Photoluminescence Surface State Spectroscopy
- A Novel Contactless and Nondestructive Measurement Method of Surface Recombination Velocity on Silicon Surfaces by Photoluminescence
- Low-Temperature Deposition of Hydrogen-Free Silicon Oxynitride without Stress by the Remote Plasma Technique : Etching and Deposition Technology
- Low-Temperature Deposition of Hydrogen-Free Silicon Oxynitride without Stress by the Remote Plasma Technique
- Improvement of Properties of SrTiO_3 Thin Films Deposited at Low Temperature and High Rate by Sputtering Gas
- Low-Temperature and High-Rate Deposition of SrTiO_3 Thin Films by RF Magnetron Sputtering
- Fine-Tolerance Resonator Applications of Bismuth-Layer-Structured Ferroelectric Ceramics
- Energy Trapping Characteristics of Bismuth Layer Structured Compound CaBi_4Ti_4O_
- Atomic-Scale Planarization of 6-Inch Si(001) Substrate by UHV Heating
- Fabrication of Novel Si Double-Barrier Structures and Their Characteristics
- Low-Energy Double-Ion -Beam Deposition System
- 24pZA-11 SCCSによるシリコンクラスター生成の高精度、高効率化(24pZA 放射線物理,領域1(原子・分子,量子エレクトロニクス,放射線物理分野))