Enhanced Electron Mobility in AlGaN/InGaN/AlGaN Double-Heterostructures by Piezoelectric Effect
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-07-15
著者
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Nishida T
Ntt Basic Res. Lab. Kanagawa Jpn
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Nishida T
Nara Inst. Sci. And Technol. Nara Jpn
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椿 光太郎
東洋大学工学部
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KOBAYASHI Naoki
NTT Basic Research Laboratories
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Nishida T
Nara Inst. Sci. And Technol. (naist) Nara Jpn
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Maeda Narihiko
Ntt Corp. Atsugi‐shi Jpn
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Maeda Narihiko
Ntt Basic Research Laboratories
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Maeda Narihiko
Institute For Solid State Physics University Of Tokyo
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Nishida T
Ntt Basic Research Laboratories
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Nishida Toshio
Ntt Basic Research Laboratories Physical Science Laboratory
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Nishida Toshio
Ntt Basic Research Laboratories
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Saitoh T
Faculty Of Technology Tokyo University Of Agriculture And Technology
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Saitoh T
Ntt Basic Research Laboratories Physical Science Laboratory
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Kobayashi N
The University Of Electro-communications Department Of Applied Physics And Chemistry
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Saitoh T
Semiconductor Device Group Advanced Devices Development Center Matsushita Electric Industrial Co. Lt
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SAITOH Tadashi
NTT Basic Research Laboratories, Physical Science Laboratory
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TSUBAKI Kotaro
NTT Basic Research Laboratories, Physical Science Laboratory
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Saitoh Tadashi
Ntt Basic Research Laboratories
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Kobayashi Naoki
Ntt Basic Laboratories Ntt Corporation
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Tsubaki Kotaro
NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
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