Bandgap and Strain Engineering in SiGeC Heterojunction Bipolar Transistors

概要

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The incorporation of C into Si1-xGex alloys contributes to enlarging the critical layer thickness and to improving the thermal budget. It also realizes a narrower bandgap with compensated strain. These effects would introduce good performance at high frequency in the devices. We fabricate heterojunction bipolar transistors (HBTs) with an Si1-x-yGexCy base layer using ultrahigh-vacuum chemical vapor deposition (UHV-CVD) technology. The bandgaps of Si1-x-yGexCy base layers are measured by the evaluation of the collector current dependence on temperature. The strain of the pseudomorphic Si1-x-yGexCy layer is also extracted by an analysis of the X-ray diffraction spectra. Good flexibility of Si1-x-yGexCy alloy is shown for the bandgap and strain engineering. The devices using the excellent characteristics of Si1-x-yGexCy alloy have numerous applications for wireless telecommunications.
Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
2001-04-30