The Concentration Profiles of Phosphorus, Arsenic and Recoiled Oxygen Atoms in Si by Ion Implantation into SiO_2-Si
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概要
- 論文の詳細を見る
The concentration profiles of phosphorus, arsenic and recoiled oxygen in Si after high dose implantations through SiO_2 films have been measured using Secondary Ion Mass Spectrometry (SIMS). The characteristics such as the standard deviation or the slopes of the exponential tails of the concentration profiles of the projectiles were found to agree with those directly implanted into bare Si within experimental errors, with the exception of a shifting of the concentration peak position. The concentration level and the maximum penetration depth in Si for recoiled oxygen relative to the projectiles are discussed in correlation with ion mass, ion energy and SiO_2 film thickness.
- 社団法人応用物理学会の論文
- 1979-03-05
著者
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Hirao Takashi
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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INOUE Kaoru
Central Research Laboratory, Matsushita Electric Industrial Co., Ltd.
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Hirao Takashi
Semiconductor Laboratory Matsushita Electric Industrial Co. Ltd.
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YAEGASHI Yuki
Research Laboratory, Matsushita Electronics Corporation
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TAKAYANAGI Shigetoshi
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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Inoue Kaoru
Semiconductor Laboratory Matsushita Electric Industrial Co. Ltd.
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Hirao Takashi
Central Research Laboratories Matsushita Electric Ind. Co. Ltd.
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Yaegashi Yuki
Research Laboratory Matsushita Electronics Corporation
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Takayanagi Shigetoshi
Semiconductor Laboratory Matsushita Electric Industrial Co. Ltd.
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Inoue Kaoru
Central Research Laboratories Matsushita Elec. Ind. Co. Ltd.
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