Hydrogen Concentration and Bond Configurations in Silicon Nitride Films Prepared by ECR Plasma CVD Method

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1988-01-20

著者

• Hirao Takashi

  Central Research Laboratories Matsushita Electric Industrial Co. Ltd.

• Hiramatsu Takahiro

  Res. Inst. For Nanodevices Kochi Univ. Of Technol. 185 Miyanokuchi Tosayamada-cho Kami Kochi 782-850

• Hirao T

  Central Research Laboratories Matsushita Electric Industrial Co. Ltd.

• IZUMI Tomio

  Department of Electronic Engineering, Faculty of Engineering, Tokai University

• KAMADA Takeshi

  Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.

• KITAGAWA Masatoshi

  Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.

• SETSUNE Kentaro

  Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.

• WASA Kiyotaka

  Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.

• TSUKAMOTO Kazuyoshi

  Matsushita Technoresearch Inc.

• Wasa Kiyotaka

  Research Institute Of Innovative Technology For The Earth

• Izumi Teruo

  Superconductivity Research Laboratory Istec

• Kamada Takeshi

  Central Research Laboratories Matsushita Electric Industrial Co. Lid.

• Izumi T

  Department Of Engineering Physics College Of Engineering Chubu University

• Kitagawa M

  Matsushita Electric Ind. Co. Moriguchi Jpn

• Kitagawa M

  Matsushita Electric Industrial Co.

• Kitagawa M

  Central Research Laboratories Matsushita Electric Industrial Co. Ltd.

• Kitagawa Masatoshi

  Corporate Production Engineering Laboratories Matsushita Electric Ind.co. Ltd.

• Kitagawa Masatoshi

  Central Research Laboratories Matsushita Electric Ind. Co. Ltd.

• Setsune Kentaro

  The Central Research Laboratories Matsushita Electric Industries Co. Ltd.

• Setsune Kentaro

  Central Research Laboratories Matsushita Electric Industrial Co. Ltd.

• Izumi T

  Superconductivity Research Laboratory International Superconductivity Technology Center

• Wasa Kiyotaka

  Central Research Laboratories Matsushita Electric Industrial Co. Ltd.

• Tsukamoto K

  Ulsi Laboratory Mitsubishi Electric Corporation

• Hirao Takashi

  Central Research Laboratories Matsushita Electric Ind. Co. Ltd.

関連論文

• Effect of pulsed substrate bias on film properties of SiO2 deposited by inductively coupled plasma chemical vapor deposition (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)
• Low-Temperature Synthesis of Aligned Carbon Nanofibers on Glass Substrates by Inductively Coupled Plasma Chemical Vapor Deposition
• Low-Temperature Growth of Carbon Nanofiber by Thermal Chemical Vapor Deposition Using CuNi Catalyst
• Enhanced nucleation of microcrystalline silicon thin films deposited by inductively coupled plasma chemical vapor deposition with low-frequency pulse substrate bias
• Intense Green Cathodoluminescence from Low-Temperature-Deposited ZnO Film with Fluted Hexagonal Cone Nanostructures
• SiO_2 Insulator Film Synthesized at 100℃ Using Tetramethylsilane by Inductively Coupled Plasma Chemical Vapor Deposition
• Effect of energetic particle bombardment on microstructure of zinc oxide films deposited by RF magnetron sputtering
• Influence of thermal annealing on microstructures of zinc oxide films deposited by RF magnetron sputtering
• Density Control of Carbon Nanotubes through the Thickness of Fe/Al Multilayer Catalyst
• Formation of Nanoscale Diamond Particles without Substrate Heating by Cathodic Arc Deposition
• Correlation between Field Electron Emission and Structural Properties in Randomly and Vertically Oriented Carbon Nanotube Films
• Ultra-Low-Threshold Field Electron Emission from Pillar Array of Aligned Carbon Nanotube Bundles
• Formation of Vertically Aligned Carbon Nanotubes by Dual-RF-Plasma Chemical Vapor Deposition : Surfaces, Interfaces, and Films
• Development of New Apparatus for Field Emission Measurement
• Characterization of Surface Conductive Diamond Layer Grown by Microwave Plasma Chemical Vapor Deposition
• Electrical Properties of Boron-Implanted Homoepitaxial Diamond Films
• Effect of Hydrogen Plasma Treatment on Implantation Damage in Diamond Films Grown by Chemical Vapour Deposition
• Synthesis of β-SiC Layer in Silicon by Carbon Ion 'Hot' Implantation
• Low-Temperature Preparation of Pb(Zr,Ti)O_3 Thin Filmson (Pb,La)TiO_3 Buffer Layer by Multi-Jon-Beam Sputtering
• Structural Properties of Silicon Oxide Films Prepared by the RF Substrate Biased ECR Plasma CVD Method
• Properties of Hydrogenated Amorphous Silicon Prepared by ECR Plasma CVD Method : Condensed Matter
• Preparation of High-Conductivity p-Type a-Si:H Films by Penning Discharge
• Preparation of Pb-Based Ferroelectric Thin Films at Room Temperature Using Excimer-Laser-Assisted Multi-Ion-Beam Sputtering
• Preparation of La-Modified Lead Titanate Thin Films by Rf-Magnetron Sputtering Method and Their Pyroelectric Properties
• Preparation of Pyroelectric Pb_La_xTi_O_3 Thin Films from Ceramic Target by RF Magnetron Sputtering
• Characterization of Pb(Zr, Ti)O_3 Thin Films Prepared by Multi-Ion-Beam Sputtering
• Substrate Potential Effects on Low-Temperature Preparation of SrTiO_3 Thin Films by RF Magnetron Sputtering
• Ferroelectric PbTiO_3 Thin Films Prepared by Multi-Ion-Beam Sputter and Ion-Assisted Deposition
• Formation of n^+ a-Si:H Thin Layer by Ion-Doping Technique
• β-SiC Formation by Low-Energy Ion-Doping Technique
• Characteristics of Superconducting Gd-Ba-Cu-O Thin Films
• Plasma Irradiation Effects on Nd-Ce-Cu-O and La-Sr-Cu-O Thin Films
• Superconductivity in Nd-Ce-Cu-O Thin Films
• Plasma Ion-Doping Technique with 20 kHz Biased Electron Cyclotron Resonance Discharge : Techniques, Instrumentations and Measurement
• Effects of Deposition Method on the Properties of Silicon Nitride and Silicon Oxynitride Films : Surfaces, Interfaces and Films
• Incorporation of Constituent Atoms of Transparent Conductive Films into Hydrogenated Amorphous Silicon via Gas Phase : Surfaces, Interfaces and Films
• Coagulation of In Atoms in Hydrogenated Amorphous Silicon Islands Deposited on ITO Films : Condensed Matter
• Large Area Doping Technique Using an Ion Source of rf Discharge with Magnetic Field : Techniques, Instrumentations and Measurement
• The Orthorhombic-to-Tetragonal Phase Transition in Sputtered Gd-Ba-Cu-O Thin Films by Low Temperature Processing : Electrical Properties of Condensed Matter
• Thermal Stability of Hydrogen in Silicon Nitride Films Prepared by ECR Plasma CVD method : Surfaces, Interfaces and Films
• Properties of Silicon Oxynitride Films Prepared by ECR Plasma CVD Method : Surfaces, Interfaces and Films
• Hydrogen Concentration and Bond Configurations in Silicon Nitride Films Prepared by ECR Plasma CVD Method
• Direct Synthesis of Carbon Nanotubes on Ti-Coated Metal Substrates and Its -Application to Electrochemical Double Layer Capacitors
• Synthesis of Aligned Carbon Nanofibers at 200℃
• Characterization of Homoepitaxial Diamond Films Grown from Carbon Monoxide
• Scanning Tunneling Microscopy Study of the c(4X4) Structure Formation in the Sub-Monolayer Sb/Si(100) System : Surfaces, Interfaces, and Films
• Mg/Si(100) Reconstructions Studied by Scanning Tunneling Microscopy
• High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
• High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
• Crystallographic Orientations of Mg0 Films Prepared by Plasma-Enhanced Metalorganic Chemical Vapor Deposition
• Influence of Deposition Conditions on the Properties of Silicon Nitride Films Prepared by the ECR Plasma CVD Method
• Observation of Intrinsic Josephson Junction Propertieson (Bi,Pb)SrCaCu0 Thin Films
• Structural Control of Epitaxially Grown Sputtered PbTiO_3 Thin Films
• Preparation and Anisotropic Superconducting Properties of HgBa_2CuO_4 Thin Films
• LOW-TEMPERATURE FORMATION OF poly-Si FILMS BY INDUCTIVELY-COUPLED SILANE PLASMA
• Coevaporation Effect of Te on P-Type CdTe:Cu Film Formation
• Silver-Induced 3 × 3 Phase on 6H-SiC(0001)√ × √ Surface
• Direct Observation of Strained Layer Formation at the Initial Stage of In Thin Film Growth on Si(100)
• Preparation of PbTiO_3 Thin Films by Ion- and Photoassisted Evaporation
• Preparation and Characterization of Pb-Based Ferroelectric Thin Films : Thin Films
• Preparation and Characterization of CuInSe_2 Thin Films by Molecular-Beam Deposition Method
• Substitution Effect of Rare Earth Elements for Y in Pb-Sr-Y-Ca-Cu-O with "1212" Structure
• Study on Annealing Treatment and Sr/Ca Ratio for Pb-Sr-Y-Ca-Cu-O Ceramics with "1212" Structure
• In Situ Preparation of Pb-Based Superconducting Thin Films at Low Temperature and Low Oxidizing Atmosphere
• Annealing Effect of (Pb/Cu)SrLaCuO_y Superconductor
• Crystal Structure of (Pb/Cu)SrLaCuO_y Superconductor
• Superconductivity in "1201" Lead Cuprate
• Low Temperature Growth of Amorphous and Polycrystalline Silicon Films from a Modified Inductively Coupled Plasma
• Lower-Temperature Growth of Hydrogenated Amorphous Silicon Films from Inductively Coupled Silane Plasma
• Simple Direct Monitoring of SiH_3 Radical and Particulates in a Silane Plasma with Ultraviolet Transmission Spectroscopy
• Positive bias instability of bottom-gate zinc oxide thin-film transistors with a SiOx/SiNx-stacked gate insulator (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)
• Thickness Dependence of Superconductivity in As-Sputtered Er-Ba-Cu-O Thin Films
• Characteristics of Intrinsic Josephson Junctions in a Thin Stack on Bi-2223 Thin Films
• 電子線照射による天然水晶ウィンドウの曇り止め効果
• Optical Properties of Bi-Sr-Ca-Cu-O Thin Films
• UV Laser Irradiation Effects on Frequemcy of Surface Acoustic Wave (SAW) Filters Coated with Titamium Oxide Films
• 80 K Superconductivity in Bi-Sr-Cu-O Thin Films
• Possibility of High T_c Superconducting Thin Films in Magnetic Application : Electrical Properties of Condensed Matter
• Preparation and Properties of Superconducting Bi-Sr-Ca-Cu-O Thin Films : Electrical Properties of Condensed Matter
• Preparation and Characterization of Supereonducting Y-Ba-Cu-O Thin Films
• Cu 2p Photoelectron and 2p_-Valence-Valence Auger Electron Spectra of Cuprate Superconductors
• Effects of Ar Ion-Beamn Etching on Gd-Ba-Cu-O Superconducting Thin Films
• Superconductivity in 2-μm Wide Strip Line of Gd-Ba-Cu-O Thin Film Fabricated by Low-Temperature Processes : Electrical Properties Condensed Matter
• Chemical Interactions between Arsenic and Boron Implanted in Silicon during Annealing
• High-T_c Superconducting Planar Filter for Power Handling Capability (Special Issue on Toward Digital and Analog Applications of Superconductors)
• Electron Spectroscopy of Nd_Ce_xCuO_(x=0,0.15,and0.23)Thin Films
• Structure and Properties of Silicon Titanium Oxide Films Prepared by Plasma-Enhanced Chemical Vapor Deposition Method
• Role of Ions and Radical Species in Silicon Nitride Deposition by ECR Plasma CVD Method
• Low Temperature Preparation of Hydrogenated Amorphous Silicon by Microwave Electron-Cyclotron-Resonance Plasma CVD
• Preparation and Properties of Cd_Mn_xS Thin Films
• Crystal Structure Analysis of Multiwalled Carbon Nanotube Forests by Newly Developed Cross-Sectional X-ray Diffraction Measurement
• Defect Structures in SiO_2 Films Doped with Si-nanocrystal
• Frequency Control Method of Magnetostatic Wave Oscillators Using External pin Diode Circuits
• Simulation of Magnetostatic Wave Envelope Soliton Propagation in Yttrium Iron Garnet Films
• (100) Preferred Orientation of Spinel-Type Iron Oxide Films Prepared by Plasma-Enhanced Metalorganic Chemical Vapor Deposition
• Preparation of Co Ferrite Films by Plasma-Enhanced Metalorganic Chemical Vapor Deposition
• The Concentration Profiles of Phosphorus, Arsenic and Recoiled Oxygen Atoms in Si by Ion Implantation into SiO_2-Si
• ESR of Diamond Films Deposited by CVD Method
• Paramagnetic Centers Created in Si-SiO_2 Structure by Ion Implantation
• Fabrication of Bi_2Sr_2Ca_1Cu_2O_/Bi_2Sr_2Nd_1Cu_2O_/Bi_2Sr_2Ca_1Cu_2O_ Josephson Junctions

もっと見る 閉じる

スポンサーリンク