Defect Structures in SiO_2 Films Doped with Si-nanocrystal

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概要

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• SiO_2 films doped with Si-nanocrystal deposited on Si substrate by co-sputtering of Si and SiO_2 have been studied using electron spin resonance (ESR) and photoluminescence (PL) methods. The ESR analysis revealed the presence of three kind of paramagnetic defect centers in the film after annealing above 900℃ in argon (Ar) atmosphere, i. e. (1) Si dangling bond in Si-nanocrystal (a-center : g=2.006), (2) Si dangling bond at the interface between Si-nanocrystal and SiO_2 (P_b-center : g=2.003), and (3) electrons trapped at the localized states close to the conduction band edge in Si-nanocrystal (P_<ce>-center : g=1.998). Moreover, visible light emission was observed in the annealed sample from the PL measurement. Both the PL intensity and the ESR signal intensity of the P_<ce>-center increased with increasing annealing temperature. These results indicate that the P_<ce>-center is strongly associated with the emission center.

• 東海大学の論文

著者

• IZUMI Tomio

  Department of Electronic Engineering, Faculty of Engineering, Tokai University

• Morisaki Hiroshi

  Department Of Anesthesiology Keio University

• NOZAKI Shinji

  Department of Physical Electronics, Tokyo Institute of Technology

• IWASE Mitsuo

  Department of Electrical Engineering and Electro-Photo Optics, Tokai University

• Iwase Mitsuo

  Department Of Electrical Engeneering Tokai University

• Nozaki Shinji

  Department Of Communications And Systems The University Of Electro-communications

• Nozaki Shinji

  Department Of Communications And Systems University Of Electro-communications

• Sato Keisuke

  Course Of Electonics

• Izumi Tomio

  Department Of Electronics

• Morisaki Hiroshi

  Department Of Communications And Systems University Of Electro-communications

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