Preparation and Properties of Cd_<1-x>Mn_xS Thin Films
スポンサーリンク
概要
- 論文の詳細を見る
Cd_<1-x>Mn_xS thin films have been prepared on glass substrates by coevaporation of CdS and Mn. Single-phase solid solutions with wurtzite structure were produced for a wider range of x up to 0.94 than the previously known soluble range of 0≤x≤0.5. Lattice constants a and c decrease linearly with increasing x. Band-gap energy E_g varies linearly with x in the range of x>0.1, and the value of E_g extrapolated to x=1, corresponding to γ-MnS (wurtzite-type), is 3.30 eV at room temperature. The films thus formed are stable for annealing at or below 450℃.
- 社団法人応用物理学会の論文
- 1994-08-15
著者
-
Hirao Takashi
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
-
WADA Takahiro
Central Research Laboratories Matsushita Electric Industry Co., Ltd.
-
Wada H
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
-
IKEDA Mitsusuke
Central Research Laboratories, Matsushita Electric Industrial Co., Lid.
-
Wada Hiroko
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
-
Ikeda Mitsusuke
Central Research Laboratories Matsushita Electric Industrial Co. Lid.
-
Ikeda Mitsusuke
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
-
Hirao Takashi
Central Research Laboratories Matsushita Electric Ind. Co. Ltd.
-
Wada Takahiro
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
関連論文
- Effect of pulsed substrate bias on film properties of SiO2 deposited by inductively coupled plasma chemical vapor deposition (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)
- Low-Temperature Synthesis of Aligned Carbon Nanofibers on Glass Substrates by Inductively Coupled Plasma Chemical Vapor Deposition
- Chemical and Structural Characterization of Cu(In, Ga)Se_2/Mo Interface in Cu(In, Ga)Se_2 Solar Cells
- Low-Temperature Growth of Carbon Nanofiber by Thermal Chemical Vapor Deposition Using CuNi Catalyst
- Surface Characterization of Chemically Treated Cu(In, Ga)Se_2 Thin Films
- Enhanced nucleation of microcrystalline silicon thin films deposited by inductively coupled plasma chemical vapor deposition with low-frequency pulse substrate bias
- Intense Green Cathodoluminescence from Low-Temperature-Deposited ZnO Film with Fluted Hexagonal Cone Nanostructures
- SiO_2 Insulator Film Synthesized at 100℃ Using Tetramethylsilane by Inductively Coupled Plasma Chemical Vapor Deposition
- Effect of energetic particle bombardment on microstructure of zinc oxide films deposited by RF magnetron sputtering
- Influence of thermal annealing on microstructures of zinc oxide films deposited by RF magnetron sputtering
- Density Control of Carbon Nanotubes through the Thickness of Fe/Al Multilayer Catalyst
- Formation of Nanoscale Diamond Particles without Substrate Heating by Cathodic Arc Deposition
- Correlation between Field Electron Emission and Structural Properties in Randomly and Vertically Oriented Carbon Nanotube Films
- Ultra-Low-Threshold Field Electron Emission from Pillar Array of Aligned Carbon Nanotube Bundles
- Formation of Vertically Aligned Carbon Nanotubes by Dual-RF-Plasma Chemical Vapor Deposition : Surfaces, Interfaces, and Films
- Development of New Apparatus for Field Emission Measurement
- Characterization of Surface Conductive Diamond Layer Grown by Microwave Plasma Chemical Vapor Deposition
- Electrical Properties of Boron-Implanted Homoepitaxial Diamond Films
- Effect of Hydrogen Plasma Treatment on Implantation Damage in Diamond Films Grown by Chemical Vapour Deposition
- Synthesis of β-SiC Layer in Silicon by Carbon Ion 'Hot' Implantation
- Low-Temperature Preparation of Pb(Zr,Ti)O_3 Thin Filmson (Pb,La)TiO_3 Buffer Layer by Multi-Jon-Beam Sputtering
- Structural Properties of Silicon Oxide Films Prepared by the RF Substrate Biased ECR Plasma CVD Method
- Properties of Hydrogenated Amorphous Silicon Prepared by ECR Plasma CVD Method : Condensed Matter
- Preparation of Pb-Based Ferroelectric Thin Films at Room Temperature Using Excimer-Laser-Assisted Multi-Ion-Beam Sputtering
- Preparation of La-Modified Lead Titanate Thin Films by Rf-Magnetron Sputtering Method and Their Pyroelectric Properties
- Preparation of Pyroelectric Pb_La_xTi_O_3 Thin Films from Ceramic Target by RF Magnetron Sputtering
- Characterization of Pb(Zr, Ti)O_3 Thin Films Prepared by Multi-Ion-Beam Sputtering
- Substrate Potential Effects on Low-Temperature Preparation of SrTiO_3 Thin Films by RF Magnetron Sputtering
- Ferroelectric PbTiO_3 Thin Films Prepared by Multi-Ion-Beam Sputter and Ion-Assisted Deposition
- Formation of n^+ a-Si:H Thin Layer by Ion-Doping Technique
- β-SiC Formation by Low-Energy Ion-Doping Technique
- Characteristics of Superconducting Gd-Ba-Cu-O Thin Films
- Plasma Irradiation Effects on Nd-Ce-Cu-O and La-Sr-Cu-O Thin Films
- Superconductivity in Nd-Ce-Cu-O Thin Films
- Plasma Ion-Doping Technique with 20 kHz Biased Electron Cyclotron Resonance Discharge : Techniques, Instrumentations and Measurement
- Effects of Deposition Method on the Properties of Silicon Nitride and Silicon Oxynitride Films : Surfaces, Interfaces and Films
- Incorporation of Constituent Atoms of Transparent Conductive Films into Hydrogenated Amorphous Silicon via Gas Phase : Surfaces, Interfaces and Films
- Coagulation of In Atoms in Hydrogenated Amorphous Silicon Islands Deposited on ITO Films : Condensed Matter
- Large Area Doping Technique Using an Ion Source of rf Discharge with Magnetic Field : Techniques, Instrumentations and Measurement
- The Orthorhombic-to-Tetragonal Phase Transition in Sputtered Gd-Ba-Cu-O Thin Films by Low Temperature Processing : Electrical Properties of Condensed Matter
- Thermal Stability of Hydrogen in Silicon Nitride Films Prepared by ECR Plasma CVD method : Surfaces, Interfaces and Films
- Properties of Silicon Oxynitride Films Prepared by ECR Plasma CVD Method : Surfaces, Interfaces and Films
- Hydrogen Concentration and Bond Configurations in Silicon Nitride Films Prepared by ECR Plasma CVD Method
- Direct Synthesis of Carbon Nanotubes on Ti-Coated Metal Substrates and Its -Application to Electrochemical Double Layer Capacitors
- Synthesis of Aligned Carbon Nanofibers at 200℃
- Characterization of Homoepitaxial Diamond Films Grown from Carbon Monoxide
- Mg/Si(100) Reconstructions Studied by Scanning Tunneling Microscopy
- High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
- High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
- Crystallographic Orientations of Mg0 Films Prepared by Plasma-Enhanced Metalorganic Chemical Vapor Deposition
- Influence of Deposition Conditions on the Properties of Silicon Nitride Films Prepared by the ECR Plasma CVD Method
- Preparation of Conductive and Transparent Thin Films by Argon Ion Beam Sputtering of Zinc Oxide in Atmosphere Containing Hydrogen
- High Energy Spectroscopy of Thin Films of Chalcopyrite Structure Cu-In-Se and Related Materials
- MoSe_2 layer formation at Cu(In, Ga)Se_2/Mo Interfaces in High Efficiency Cu(In_Ga_x)Se_2 Solar Cells
- Preparation of Device-Quality Cu(In, Ga)Se_2 Thin Films Deposited by Coevaporation with Composition Monitor
- Preparation of Ordered Vacancy Chalcopyrite-Type CuIn_3Se_5 Thin Films
- Coevaporation Effect of Te on P-Type CdTe:Cu Film Formation
- Silver-Induced 3 × 3 Phase on 6H-SiC(0001)√ × √ Surface
- Annealing Effect of High-T_c Superconducting Y(Ba_Sr_x)_2Cu_3O_ Ceramics
- Preparation of PbTiO_3 Thin Films by Ion- and Photoassisted Evaporation
- Preparation and Characterization of Pb-Based Ferroelectric Thin Films : Thin Films
- Preparation Chalcopyrite-type Semiconductor Films by Sulfuration of Oxide Films
- Preparation and Characterization of CuInSe_2 Thin Films by Molecular-Beam Deposition Method
- Low Temperature Growth of Amorphous and Polycrystalline Silicon Films from a Modified Inductively Coupled Plasma
- Lower-Temperature Growth of Hydrogenated Amorphous Silicon Films from Inductively Coupled Silane Plasma
- Simple Direct Monitoring of SiH_3 Radical and Particulates in a Silane Plasma with Ultraviolet Transmission Spectroscopy
- Positive bias instability of bottom-gate zinc oxide thin-film transistors with a SiOx/SiNx-stacked gate insulator (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)
- Preparation of High-T_c (110 K) Superconducting Phase by the Annealing of Low-T_c (80 K) Superconductor Bi_2(Sr_Ca_)_ Cu_2O_y : Electrical Properties of Condensed Matter
- Preparation of High-T_c (105K)superconducting Phase in Bi-Sr-Ca-K-Cu Oxide System : Electrical Properties of Condensed Matter
- Substitution Effect of Sr for Ba of High-T_c Superconducting YBa_2Cu_3O^ Ceramics
- Effect of Crystal Symmetry on Electronic Structures of CuInSe_2 and Related Compounds
- Chemical Interactions between Arsenic and Boron Implanted in Silicon during Annealing
- Crystal Structure of CuIn_3Se_5 Semiconductor Studies Using Electron and X-ray Diffractions
- Role of Ions and Radical Species in Silicon Nitride Deposition by ECR Plasma CVD Method
- Low Temperature Preparation of Hydrogenated Amorphous Silicon by Microwave Electron-Cyclotron-Resonance Plasma CVD
- Preparation and Properties of Cd_Mn_xS Thin Films
- Crystal Structure Analysis of Multiwalled Carbon Nanotube Forests by Newly Developed Cross-Sectional X-ray Diffraction Measurement
- Frequency Control Method of Magnetostatic Wave Oscillators Using External pin Diode Circuits
- Simulation of Magnetostatic Wave Envelope Soliton Propagation in Yttrium Iron Garnet Films
- (100) Preferred Orientation of Spinel-Type Iron Oxide Films Prepared by Plasma-Enhanced Metalorganic Chemical Vapor Deposition
- Preparation of Co Ferrite Films by Plasma-Enhanced Metalorganic Chemical Vapor Deposition
- Formation of Ion Pairs and Carrier Transport in Undoped and Dye-Doped Poly (N-Vinylcarbazole) Films
- The Concentration Profiles of Phosphorus, Arsenic and Recoiled Oxygen Atoms in Si by Ion Implantation into SiO_2-Si
- Low-Temperature Preparation of Doped Hydrogenated Amorphous Silicon Films by AC-Biased Microwave ECR Plasma CVD Method
- Studies on salt hydrates for latent heat storage. IV. Crystallization in the binary system CH3CO2Na-h2o.
- Equilibria in aqueous ternary system containing Na+,CH3CO2-, and HPO42- between 38 and 75.DEG.C.
- Studies on salt hydrates for latent heat storge. VI. Preheating effect on crystallization of sodium acetate trihydrate from aqueous solution with a small amount of disodium hydrogenphosphate.
- Studies on salt hydrates for latent heat storage. V. Preheating effect on crystallization of sodium acetate trihydrate from aqueous solution with a small amount of sodium pyrophosphate decahydrate.