Hirao Takashi | Central Research Laboratories Matsushita Electric Ind. Co. Ltd.

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著作論文

Characterization of Surface Conductive Diamond Layer Grown by Microwave Plasma Chemical Vapor Deposition
Electrical Properties of Boron-Implanted Homoepitaxial Diamond Films
Effect of Hydrogen Plasma Treatment on Implantation Damage in Diamond Films Grown by Chemical Vapour Deposition
Synthesis of β-SiC Layer in Silicon by Carbon Ion 'Hot' Implantation
Low-Temperature Preparation of Pb(Zr,Ti)O_3 Thin Filmson (Pb,La)TiO_3 Buffer Layer by Multi-Jon-Beam Sputtering
Structural Properties of Silicon Oxide Films Prepared by the RF Substrate Biased ECR Plasma CVD Method
Properties of Hydrogenated Amorphous Silicon Prepared by ECR Plasma CVD Method : Condensed Matter
Preparation of Pb-Based Ferroelectric Thin Films at Room Temperature Using Excimer-Laser-Assisted Multi-Ion-Beam Sputtering
Preparation of La-Modified Lead Titanate Thin Films by Rf-Magnetron Sputtering Method and Their Pyroelectric Properties
Preparation of Pyroelectric Pb_La_xTi_O_3 Thin Films from Ceramic Target by RF Magnetron Sputtering
Characterization of Pb(Zr, Ti)O_3 Thin Films Prepared by Multi-Ion-Beam Sputtering
Substrate Potential Effects on Low-Temperature Preparation of SrTiO_3 Thin Films by RF Magnetron Sputtering
Ferroelectric PbTiO_3 Thin Films Prepared by Multi-Ion-Beam Sputter and Ion-Assisted Deposition
Formation of n^+ a-Si:H Thin Layer by Ion-Doping Technique
β-SiC Formation by Low-Energy Ion-Doping Technique
Characteristics of Superconducting Gd-Ba-Cu-O Thin Films
Plasma Irradiation Effects on Nd-Ce-Cu-O and La-Sr-Cu-O Thin Films
Superconductivity in Nd-Ce-Cu-O Thin Films
Plasma Ion-Doping Technique with 20 kHz Biased Electron Cyclotron Resonance Discharge : Techniques, Instrumentations and Measurement
Effects of Deposition Method on the Properties of Silicon Nitride and Silicon Oxynitride Films : Surfaces, Interfaces and Films
Coagulation of In Atoms in Hydrogenated Amorphous Silicon Islands Deposited on ITO Films : Condensed Matter
Large Area Doping Technique Using an Ion Source of rf Discharge with Magnetic Field : Techniques, Instrumentations and Measurement
The Orthorhombic-to-Tetragonal Phase Transition in Sputtered Gd-Ba-Cu-O Thin Films by Low Temperature Processing : Electrical Properties of Condensed Matter
Thermal Stability of Hydrogen in Silicon Nitride Films Prepared by ECR Plasma CVD method : Surfaces, Interfaces and Films
Properties of Silicon Oxynitride Films Prepared by ECR Plasma CVD Method : Surfaces, Interfaces and Films
Hydrogen Concentration and Bond Configurations in Silicon Nitride Films Prepared by ECR Plasma CVD Method
Characterization of Homoepitaxial Diamond Films Grown from Carbon Monoxide
Crystallographic Orientations of Mg0 Films Prepared by Plasma-Enhanced Metalorganic Chemical Vapor Deposition
Influence of Deposition Conditions on the Properties of Silicon Nitride Films Prepared by the ECR Plasma CVD Method
Coevaporation Effect of Te on P-Type CdTe:Cu Film Formation
Preparation of PbTiO_3 Thin Films by Ion- and Photoassisted Evaporation
Preparation and Characterization of Pb-Based Ferroelectric Thin Films : Thin Films
Preparation and Characterization of CuInSe_2 Thin Films by Molecular-Beam Deposition Method
Simple Direct Monitoring of SiH_3 Radical and Particulates in a Silane Plasma with Ultraviolet Transmission Spectroscopy
Chemical Interactions between Arsenic and Boron Implanted in Silicon during Annealing
Role of Ions and Radical Species in Silicon Nitride Deposition by ECR Plasma CVD Method
Low Temperature Preparation of Hydrogenated Amorphous Silicon by Microwave Electron-Cyclotron-Resonance Plasma CVD
Preparation and Properties of Cd_Mn_xS Thin Films
Preparation of Co Ferrite Films by Plasma-Enhanced Metalorganic Chemical Vapor Deposition
The Concentration Profiles of Phosphorus, Arsenic and Recoiled Oxygen Atoms in Si by Ion Implantation into SiO_2-Si
Low-Temperature Preparation of Doped Hydrogenated Amorphous Silicon Films by AC-Biased Microwave ECR Plasma CVD Method

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