Low Temperature Preparation of Hydrogenated Amorphous Silicon by Microwave Electron-Cyclotron-Resonance Plasma CVD
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概要
- 論文の詳細を見る
Hydrogenated amorphous silicon films were deposited by microwave electron-cyclotron-resonance plasma CVD technique using pure mono silane gas without intentional substrate heating. A high photoconductivity value of 10^<-6>〜10^<-5>(Ω・cm)^<-1> under simulated AM1 (100mW/cm^2) illumination was obtained for the as-grown films with optical gaps of 〜2.1 eV. Localized tail states estimated from optical absorption measurements are discussed with the characteristics of the films.
- 社団法人応用物理学会の論文
- 1987-04-20
著者
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Hirao Takashi
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Hiramatsu Takahiro
Res. Inst. For Nanodevices Kochi Univ. Of Technol. 185 Miyanokuchi Tosayamada-cho Kami Kochi 782-850
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Hirao T
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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KITAGAWA Masatoshi
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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SETSUNE Kentaro
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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MANABE Yoshio
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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Kitagawa M
Matsushita Electric Ind. Co. Moriguchi Jpn
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Kitagawa M
Matsushita Electric Industrial Co.
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Kitagawa M
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Kitagawa Masatoshi
Corporate Production Engineering Laboratories Matsushita Electric Ind.co. Ltd.
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Kitagawa Masatoshi
Central Research Laboratories Matsushita Electric Ind. Co. Ltd.
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Setsune Kentaro
The Central Research Laboratories Matsushita Electric Industries Co. Ltd.
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Setsune Kentaro
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Manabe Y
Fujitsu Ltd. Kawasaki Jpn
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Manabe Yoshio
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Ishihara Shin-ichiro
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Hirao Takashi
Central Research Laboratories Matsushita Electric Ind. Co. Ltd.
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