Zinc Oxide Thin Films Prepared by the Electron-Cyclotron-Resonance Plasma Sputtering Method
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概要
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Zinc oxide (ZnO) thin films have been prepared by a sputtering deposition utilizing electron-cyclotron-resonance (ECR) plasma. An X-ray diffraction analysis indicated that the ZnO films were highly c-axis oriented. The electrical resistivity of ZnO films is as high as 2.5 MΩcm. It is confirmed that the ZnO films exhibit strong piezoelectricity. For a film-thickness-to-wavelength ratio h/λ of about 0.16, the effective electromechanical coupling coefficient k^2 for a surface acoustic wave was 0.7%, which is above 90% of the calculated value. The measured values of k^2 are comparable to those of the films fabricated by other conventional sputtering methods. In addition, optical emission spectroscopy was carried out during the deposition.
- 社団法人応用物理学会の論文
- 1990-02-20
著者
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MANABE Yoshio
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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MITSUYU Tsuneo
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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Manabe Yoshio
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Mitsuyu Tsuneo
Central Research Laboratories Matsushita Electric Ind. Co. Lid.
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Mitsuyu Tsuneo
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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