Zn_<1-x>Cd_xSe(X=0.2-0.3)Single-Quantum-Well Laser Diodes without GaAs Buffer Layers
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概要
- 論文の詳細を見る
Laser diode action has been observed from a ZnSe-based single-quantum-well structure grown on GaAs substrates without GaAs buffer layers. The lasers emit coherent light under pulsed current injection at 77 K in a wide wavelength range from 490 nm to 520 nm depending on the quantum well composition ratio. In spite of uncoated facets, the lowest threshold current density of the lasers was as low as 160 A/cm^2. The output power from the lasers exceeded 100 mW perfacet.
- 社団法人応用物理学会の論文
- 1992-10-15
著者
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Hayashi Shinji
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kobe University
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Hayashi S
Department Of Electrical And Electronics Engineering Faculty Of Engineering Kobe University
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Hayashi Shigenori
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corporation
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Hayashi Shigenori
Faculty Of Engineering Osaka University
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Matsushima Tomoaki
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Mitsuyu T
Hirao Active Glass Project Erato Japan Science And Technology Corporation
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Mitsuyu Tsuneo
Central Research Laboratories Matsushita Electric Ind. Co. Lid.
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TSUJIMURA Ayumu
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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Tsujimura Ayumu
Advanced Technology Research Laboratories Matsushita Electric Ind.co. Ltd.
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OHKAWA Kazuhiro
Central Research Laboratories, Matsushita Electric
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YOSHII Shigeo
Central Research Laboratories, Matsushita Electric
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HAYASHI Shigeo
Central Research Laboratories, Matsushita Electric
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Yoshii S
Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.
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Yoshii S
Ibaraki Electrical Communication Lab.
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Ohkawa K
Sci. Univ. Tokyo Tokyo Jpn
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