Ohkawa K | Sci. Univ. Tokyo Tokyo Jpn
スポンサーリンク
概要
関連著者
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Ohkawa K
Sci. Univ. Tokyo Tokyo Jpn
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Mitsuyu Tsuneo
Central Research Laboratories Matsushita Electric Ind. Co. Lid.
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OHKAWA Kazuhiro
Central Research Laboratories, Matsushita Electric
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Matsushima Tomoaki
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Mitsuyu T
Hirao Active Glass Project Erato Japan Science And Technology Corporation
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Tsujimura Ayumu
Advanced Technology Research Laboratories Matsushita Electric Ind.co. Ltd.
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Yoshii S
Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.
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Yoshii S
Ibaraki Electrical Communication Lab.
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Hayashi Shinji
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kobe University
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Hayashi S
Department Of Electrical And Electronics Engineering Faculty Of Engineering Kobe University
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Hayashi Shigenori
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corporation
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Hayashi Shigenori
Faculty Of Engineering Osaka University
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TSUJIMURA Ayumu
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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YOSHII Shigeo
Central Research Laboratories, Matsushita Electric
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HAYASHI Shigeo
Central Research Laboratories, Matsushita Electric
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Hayashi Shigenori
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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MITSUYU Tsuneo
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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HOMMEL Detlef
Institute of Solid State Physics, University of Bremen
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Karasawa T
Inst. Space And Astronautical Sci. Sagamihara Jpn
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Karasawa T
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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Hommel Detlef
Institute Of Solid State Physics University Of Bremen
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KARASAWA Takeshi
Central Research Laboratories, Matsushita Electric
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Takeishi Hidemi
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Takeishi Hidemi
Central Research Laboratories Matsushita Electric
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WENISCH Helmut
Institute of Solid State Physics, University of Bremen
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BEHRINGER Martin
Institute of Solid State Physics, University of Bremen
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FEHRER Michael
Institute of Solid State Physics, University of Bremen
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KLUDE Matthias
Institute of Solid State Physics, University of Bremen
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ISEMANN Andreas
Institute of Solid State Physics, University of Bremen
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Wenisch Helmut
Institute Of Solid State Physics University Of Bremen:(present Address)department Of Applied Physics
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Klude Matthias
Institute Of Solid State Physics University Of Bremen
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Fehrer Michael
Institute Of Solid State Physics University Of Bremen
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Behringer Martin
Institute Of Solid State Physics University Of Bremen
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Isemann Andreas
Institute Of Solid State Physics University Of Bremen
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YOSHII Shigeo
Matsushita Electric Industrial Co., Ltd.
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OHKAWA Kazuhiro
Department of Applied Physics, Faculty of Science, Tokyo University of Science
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SASAI Yoichi
Matsushita Electric Industrial Co. Ltd.
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Ueno Akifumi
Department Of Materials Science Toyohashi University Of Technology
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Kamiyama Satoshi
Matsushita Electric Ind. Co. Ltd. Semiconductor Research Center
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Narusawa Tadashi
Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.
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Ueno Akira
Central Research Laboratories Matsushita Electric Ind. Co. Lid.
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TAKEISHI Hidemi
Central Research Laboratories, Matsushita Electric
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YOKOGAWA Toshiya
Matsushita Electric Ind. Co., Ltd., Semiconductor Research Center
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OHKAWA Kazuhiro
Matsushita Electric Ind. Co., Ltd., Semiconductor Research Center
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TSUJIMURA Ayumu
Matsushita Electric Ind. Co., Ltd., Semiconductor Research Center
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OHKAWA Kazuhiro
Institute of Solid State Physics, University of Bremen
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TAKAHASHI Yasuhito
Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd.
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Ohkawa Kazuhiro
Department Of Applied Physics Faculty Of Science Tokyo University Of Science
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Yokogawa T
Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.
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Yokogawa Toshiya
Matsushita Electric Ind. Co. Ltd Semiconductor Research Center
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Takahashi Yasuhito
Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.
著作論文
- Compound-Source Molecular Beam Epitaxy for ZnCdSe/ZnSSe/ZnMgSSe Laser Structure
- Characteristics of p-type ZnSe Layers Grown by Molecular Beam Epitaxy with Radical Doping
- Real-Index Guided Blue-Green Laser Diode with Small Beam Astigmatism Fabricated Using ZnO Buried Structure
- Blue Electroluminescence from ZnSe p-n Junction Light-Emitting Diodes
- Device Properties of Homo- and Heteroepitaxial ZnSe-Based Laser Diodes
- Growth of Wide Gap II-VI Materials, Its Characterization and Device Application
- ZnSe-Based Diode Lasers with Stripe-Geometry Fabricated by Ion Bombardment
- Cavity Parameters of ZnCdSe/ZnSe Single-Quantum-Well Separate-Confinement-Heterostructure Laser Diodes
- Zn_Cd_xSe(X=0.2-0.3)Single-Quantum-Well Laser Diodes without GaAs Buffer Layers