Device Properties of Homo- and Heteroepitaxial ZnSe-Based Laser Diodes
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-04-30
著者
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HOMMEL Detlef
Institute of Solid State Physics, University of Bremen
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Hommel Detlef
Institute Of Solid State Physics University Of Bremen
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WENISCH Helmut
Institute of Solid State Physics, University of Bremen
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BEHRINGER Martin
Institute of Solid State Physics, University of Bremen
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FEHRER Michael
Institute of Solid State Physics, University of Bremen
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KLUDE Matthias
Institute of Solid State Physics, University of Bremen
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ISEMANN Andreas
Institute of Solid State Physics, University of Bremen
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OHKAWA Kazuhiro
Institute of Solid State Physics, University of Bremen
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Wenisch Helmut
Institute Of Solid State Physics University Of Bremen:(present Address)department Of Applied Physics
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Klude Matthias
Institute Of Solid State Physics University Of Bremen
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Fehrer Michael
Institute Of Solid State Physics University Of Bremen
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Ohkawa K
Sci. Univ. Tokyo Tokyo Jpn
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Behringer Martin
Institute Of Solid State Physics University Of Bremen
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Isemann Andreas
Institute Of Solid State Physics University Of Bremen
関連論文
- Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II-VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding
- Wafer Bonding of GaN and ZnSSe for Optoelectronic Applications
- Compound-Source Molecular Beam Epitaxy for ZnCdSe/ZnSSe/ZnMgSSe Laser Structure
- Characteristics of p-type ZnSe Layers Grown by Molecular Beam Epitaxy with Radical Doping
- Real-Index Guided Blue-Green Laser Diode with Small Beam Astigmatism Fabricated Using ZnO Buried Structure
- Blue Electroluminescence from ZnSe p-n Junction Light-Emitting Diodes
- Device Properties of Homo- and Heteroepitaxial ZnSe-Based Laser Diodes
- Growth of Wide Gap II-VI Materials, Its Characterization and Device Application
- ZnSe-Based Diode Lasers with Stripe-Geometry Fabricated by Ion Bombardment
- Cavity Parameters of ZnCdSe/ZnSe Single-Quantum-Well Separate-Confinement-Heterostructure Laser Diodes
- Zn_Cd_xSe(X=0.2-0.3)Single-Quantum-Well Laser Diodes without GaAs Buffer Layers
- Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II–VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding
- Wafer Bonding of GaN and ZnSSe for Optoelectronic Applications
- Device Properties of Homo- and Heteroepitaxial ZnSe-Based Laser Diodes