Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II–VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding

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概要

• 論文の詳細を見る

• We report on the structural and optical characteristics of InGaN/GaN light-emitting diodes (LEDs) and $n$-type ZnSe-based II–VI distributed Bragg reflectors combined by direct wafer bonding. Reflectivity and transmission electron microscopy (TEM) measurements were performed. The bonded sample exhibited a higher reflectivity at the wavelength of 510 nm than a control LED with an Al cap. Samples were bonded at 270°C for 60 min or at 650°C for 5 min. Cross-sectional TEM revealed a uniform wafer-bonded interface with no voids or cavities for the low temperature sample, while the sample bonded at a higher temperature was observed to have lens-shaped cavities at semiconductor interfaces.

• Japan Society of Applied Physicsの論文
• 2005-07-10

著者

• SPECK James

  ERATO JST, UCSB Group, University of California

• DENBAARS Steven

  ERATO JST, UCSB Group, University of California

• MISHRA Umesh

  ERATO JST, UCSB Group, University of California

• MURAI Akihiko

  ERATO JST, UCSB group, University of California

• SAMONJI Katsuya

  ERATO JST, UCSB group, University of California

• MCCARTHY Lee

  Material and ECE Departments, University of California

• Kruse Carsten

  Institute Of Solid State Physics University Of Bremen

• Hommel Detlef

  Institute Of Solid State Physics University Of Bremen

• Samonji Katsuya

  ERATO JST, UCSB group, University of California, Santa Barbara, CA 93106, U.S.A.

• Mishra Umesh

  ERATO JST, UCSB group, University of California, Santa Barbara, CA 93106, U.S.A.

• McCarthy Lee

  Material and ECE Departments, University of California, Santa Barbara, CA 93106, U.S.A.

• Murai Akihiko

  ERATO JST, UCSB group, University of California, Santa Barbara, CA 93106, U.S.A.

• DenBaars Steven

  ERATO JST, UCSB group, University of California, Santa Barbara, CA 93106, U.S.A.

• Hommel Detlef

  Institute of Solid State Physics, University of Bremen, D-28359, Germany

関連論文

• Growth of AlN by the Chemical Vapor Reaction Process
• Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates
• Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II-VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding
• Device Properties of Homo- and Heteroepitaxial ZnSe-Based Laser Diodes
• Growth of Wide Gap II-VI Materials, Its Characterization and Device Application
• Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II–VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding
• Growth of AlN by the Chemical Vapor Reaction Process
• Wafer Bonding of GaN and ZnSSe for Optoelectronic Applications
• Device Properties of Homo- and Heteroepitaxial ZnSe-Based Laser Diodes
• Demonstration of Nonpolar $m$-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing $m$-Plane GaN Substrates

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