Growth of AlN by the Chemical Vapor Reaction Process
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概要
- 論文の詳細を見る
AlN was grown by a chemical vapor reaction process with metallic Al and ammonium chloride as source precursors. A detailed parameter study was performed for direct growth on sapphire substrates. Specular films were obtained with optimum ammonium chloride supply for a given temperature. Due to lack of optimization of initial growth conditions, these specular films on sapphire contained polycrystalline inclusions. These inclusions were successfully avoided by regrowing on metalorganic chemical vapor deposition (MOCVD)-grown AlN templates. Inversion domains which existed in the MOCVD templates were eliminated at the interface of regrowth although the density of edge-type dislocations was not reduced, and remained at $9.3\times 10^{9}$ cm-2. Growth on grooved sapphire resulted in AlN domains with their $c$-axis perpendicular to the sidewalls of the grooves. The top free surface which was inclined by about 20° to the basal plane of the sapphire substrate was $m$-plane. The top portion of this domain showed reduced dislocation density, as low as $8\times 10^{8}$ cm-2.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-02-15
著者
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SPECK James
ERATO JST, UCSB Group, University of California
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NAKAMURA Shuji
ERATO JST, UCSB Group, University of California
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SAMONJI Katsuya
ERATO JST, UCSB group, University of California
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HASHIMOTO Tadao
ERATO/JST, UCSB group
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FUJITO Kenji
ERATO/JST, UCSB group
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Samonji Katsuya
ERATO/JST, UCSB group, Santa Barbara, CA 93106-5050, USA
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Speck James
ERATO/JST, UCSB group, Santa Barbara, CA 93106-5050, USA
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Fujito Kenji
ERATO/JST, UCSB group, Santa Barbara, CA 93106-5050, USA
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Nakamura Shuji
ERATO/JST, UCSB group, Santa Barbara, CA 93106-5050, USA
関連論文
- Growth of AlN by the Chemical Vapor Reaction Process
- Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates
- Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II-VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding
- Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II–VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding
- Growth of AlN by the Chemical Vapor Reaction Process
- Demonstration of Nonpolar $m$-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing $m$-Plane GaN Substrates