Device Properties of Homo- and Heteroepitaxial ZnSe-Based Laser Diodes

スポンサーリンク

概要

• 論文の詳細を見る

• The characteristics of ZnSe-based laser diodesgrown on GaAs and ZnSe substrates are discussed. There is nosignificant difference observed in the dynamic behavior and in the operatingvoltages between the two cases. The degradation mechanism is similar with the developingof dark line defects and a 1/t-like decrease in light intensity atconstant current for t →∞. The width of the darkline defects is in homoepitaxy almost constant in time, althoughtheir number is higher. This difference is also reflected in thelifetimes of our devices during lasing, which is in heteroepitaxythree minutes and about one second in homoepitaxy, for both in cwoperation at room temperature.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1999-04-30

著者

• Hommel Detlef

  Institute Of Solid State Physics University Of Bremen

• OHKAWA Kazuhiro

  Institute of Solid State Physics, University of Bremen

• Wenisch Helmut

  Institute Of Solid State Physics University Of Bremen:(present Address)department Of Applied Physics

• Klude Matthias

  Institute Of Solid State Physics University Of Bremen

• Fehrer Michael

  Institute Of Solid State Physics University Of Bremen

• Behringer Martin

  Institute Of Solid State Physics University Of Bremen

• Isemann Andreas

  Institute Of Solid State Physics University Of Bremen

• Ohkawa Kazuhiro

  Institute of Solid State Physics, University of Bremen, Kufsteiner Str. NW1, D-28359 Bremen, Germany

• Isemann Andreas

  Institute of Solid State Physics, University of Bremen, Kufsteiner Str. NW1, D-28359 Bremen, Germany

• Behringer Martin

  Institute of Solid State Physics, University of Bremen, Kufsteiner Str. NW1, D-28359 Bremen, Germany

• Wenisch Helmut

  Institute of Solid State Physics, University of Bremen, Kufsteiner Str. NW1, D-28359 Bremen, Germany

関連論文

• Device Properties of Homo- and Heteroepitaxial ZnSe-Based Laser Diodes
• Growth of Wide Gap II-VI Materials, Its Characterization and Device Application
• Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II–VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding
• Wafer Bonding of GaN and ZnSSe for Optoelectronic Applications
• Device Properties of Homo- and Heteroepitaxial ZnSe-Based Laser Diodes

スポンサーリンク