Hommel Detlef | Institute Of Solid State Physics University Of Bremen
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概要
関連著者
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Hommel Detlef
Institute Of Solid State Physics University Of Bremen
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Wenisch Helmut
Institute Of Solid State Physics University Of Bremen:(present Address)department Of Applied Physics
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Klude Matthias
Institute Of Solid State Physics University Of Bremen
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Fehrer Michael
Institute Of Solid State Physics University Of Bremen
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Behringer Martin
Institute Of Solid State Physics University Of Bremen
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Isemann Andreas
Institute Of Solid State Physics University Of Bremen
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HOMMEL Detlef
Institute of Solid State Physics, University of Bremen
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Kruse Carsten
Institute Of Solid State Physics University Of Bremen
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WENISCH Helmut
Institute of Solid State Physics, University of Bremen
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BEHRINGER Martin
Institute of Solid State Physics, University of Bremen
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FEHRER Michael
Institute of Solid State Physics, University of Bremen
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KLUDE Matthias
Institute of Solid State Physics, University of Bremen
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ISEMANN Andreas
Institute of Solid State Physics, University of Bremen
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OHKAWA Kazuhiro
Institute of Solid State Physics, University of Bremen
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Ohkawa K
Sci. Univ. Tokyo Tokyo Jpn
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OHKAWA Kazuhiro
Department of Applied Physics, Faculty of Science, Tokyo University of Science
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SPECK James
ERATO JST, UCSB Group, University of California
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DENBAARS Steven
ERATO JST, UCSB Group, University of California
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MISHRA Umesh
ERATO JST, UCSB Group, University of California
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Denbaars Steven
Nicp/erato Jst Ucsb Group University Of California
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MURAI Akihiko
ERATO JST, UCSB group, University of California
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SAMONJI Katsuya
ERATO JST, UCSB group, University of California
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MCCARTHY Lee
Material and ECE Departments, University of California
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Mccarthy Lee
Departments Of Electrical And Computer Engineering University Of California Santa Barbara
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Figge Stephan
Institute Of Solid State Physics University Of Bremen
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Murai Akihiko
Nicp/erato Jst Ucsb Group University Of California
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Ohkawa Kazuhiro
Department Of Applied Physics Faculty Of Science Tokyo University Of Science
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Samonji Katsuya
ERATO JST, UCSB group, University of California, Santa Barbara, CA 93106, U.S.A.
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Mishra Umesh
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Mishra Umesh
Departments of Electrical and Computer Engineering, University of California Santa Barbara, California 93106-5050, U.S.A.
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Mishra Umesh
ERATO JST, UCSB group, University of California, Santa Barbara, CA 93106, U.S.A.
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Kruse Carsten
Institute of Solid State Physics, University of Bremen, Bremen D-28359, Germany
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McCarthy Lee
Departments of Electrical and Computer Engineering, University of California Santa Barbara, California 93106-5050, U.S.A.
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Mccarthy Lee
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
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McCarthy Lee
Material and ECE Departments, University of California, Santa Barbara, CA 93106, U.S.A.
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Murai Akihiko
NICP/ERATO JST, UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Murai Akihiko
ERATO JST, UCSB group, University of California, Santa Barbara, CA 93106, U.S.A.
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DenBaars Steven
ERATO JST, UCSB group, University of California, Santa Barbara, CA 93106, U.S.A.
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Figge Stephan
Institute of Solid State Physics, University of Bremen, Bremen D-28359, Germany
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Hommel Detlef
Institute of Solid State Physics, University of Bremen, Bremen D-28359, Germany
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Hommel Detlef
Institute of Solid State Physics, University of Bremen, D-28359, Germany
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Ohkawa Kazuhiro
Institute of Solid State Physics, University of Bremen, Kufsteiner Str. NW1, D-28359 Bremen, Germany
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Isemann Andreas
Institute of Solid State Physics, University of Bremen, Kufsteiner Str. NW1, D-28359 Bremen, Germany
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Behringer Martin
Institute of Solid State Physics, University of Bremen, Kufsteiner Str. NW1, D-28359 Bremen, Germany
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Wenisch Helmut
Institute of Solid State Physics, University of Bremen, Kufsteiner Str. NW1, D-28359 Bremen, Germany
著作論文
- Device Properties of Homo- and Heteroepitaxial ZnSe-Based Laser Diodes
- Growth of Wide Gap II-VI Materials, Its Characterization and Device Application
- Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II–VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding
- Wafer Bonding of GaN and ZnSSe for Optoelectronic Applications
- Device Properties of Homo- and Heteroepitaxial ZnSe-Based Laser Diodes