Growth of Wide Gap II-VI Materials, Its Characterization and Device Application
スポンサーリンク
概要
- 論文の詳細を見る
- 1998-09-07
著者
-
OHKAWA Kazuhiro
Department of Applied Physics, Faculty of Science, Tokyo University of Science
-
HOMMEL Detlef
Institute of Solid State Physics, University of Bremen
-
Hommel Detlef
Institute Of Solid State Physics University Of Bremen
-
WENISCH Helmut
Institute of Solid State Physics, University of Bremen
-
BEHRINGER Martin
Institute of Solid State Physics, University of Bremen
-
FEHRER Michael
Institute of Solid State Physics, University of Bremen
-
KLUDE Matthias
Institute of Solid State Physics, University of Bremen
-
ISEMANN Andreas
Institute of Solid State Physics, University of Bremen
-
Wenisch Helmut
Institute Of Solid State Physics University Of Bremen:(present Address)department Of Applied Physics
-
Klude Matthias
Institute Of Solid State Physics University Of Bremen
-
Fehrer Michael
Institute Of Solid State Physics University Of Bremen
-
Ohkawa K
Sci. Univ. Tokyo Tokyo Jpn
-
Ohkawa Kazuhiro
Department Of Applied Physics Faculty Of Science Tokyo University Of Science
-
Behringer Martin
Institute Of Solid State Physics University Of Bremen
-
Isemann Andreas
Institute Of Solid State Physics University Of Bremen
関連論文
- Electrooptic Effect of Water in Electric Double Layer at Interface of GaN Electrode
- Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II-VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding
- Wafer Bonding of GaN and ZnSSe for Optoelectronic Applications
- Compound-Source Molecular Beam Epitaxy for ZnCdSe/ZnSSe/ZnMgSSe Laser Structure
- Characteristics of p-type ZnSe Layers Grown by Molecular Beam Epitaxy with Radical Doping
- Real-Index Guided Blue-Green Laser Diode with Small Beam Astigmatism Fabricated Using ZnO Buried Structure
- Instability of Cl-Related Deep Defects in ZnSe
- Blue Electroluminescence from ZnSe p-n Junction Light-Emitting Diodes
- Device Properties of Homo- and Heteroepitaxial ZnSe-Based Laser Diodes
- Growth of Wide Gap II-VI Materials, Its Characterization and Device Application
- ZnSe-Based Diode Lasers with Stripe-Geometry Fabricated by Ion Bombardment
- Cavity Parameters of ZnCdSe/ZnSe Single-Quantum-Well Separate-Confinement-Heterostructure Laser Diodes
- Zn_Cd_xSe(X=0.2-0.3)Single-Quantum-Well Laser Diodes without GaAs Buffer Layers
- Photo-induced CO_2 Reduction with GaN Electrode in Aqueous System
- High Stability and Efficiency of GaN Photocatalyst for Hydrogen Generation from Water
- CO2 Conversion with Light and Water by GaN Photoelectrode
- Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II–VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding
- Wafer Bonding of GaN and ZnSSe for Optoelectronic Applications
- Morphological Characteristics of $a$-Plane GaN Grown on $r$-Plane Sapphire by Metalorganic Vapor-Phase Epitaxy
- Direct Observation of an Ordered Phase in ($11\bar{2}0$) Plane InGaN Alloy
- Modeling of Reaction Pathways of GaN Growth by Metalorganic Vapor-Phase Epitaxy Using TMGa/NH3/H2 System: A Computational Fluid Dynamics Simulation Study
- Highly Stable GaN Photocatalyst for Producing H
- Enhanced Capability of Photoelectrochemical CO
- Investigation of Growth Mechanism for InGaN by Metal--Organic Vapor Phase Epitaxy Using Computational Fluid Simulation
- Enhanced Capability of Photoelectrochemical CO₂ Conversion System Using an AlGaN/GaN Photoelectrode (Special Issue : Recent Advances in Nitride Semiconductors)
- Device Properties of Homo- and Heteroepitaxial ZnSe-Based Laser Diodes