Growth of Wide Gap II-VI Materials, Its Characterization and Device Application
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概要
- 論文の詳細を見る
- 1998-09-07
著者
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OHKAWA Kazuhiro
Department of Applied Physics, Faculty of Science, Tokyo University of Science
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HOMMEL Detlef
Institute of Solid State Physics, University of Bremen
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Hommel Detlef
Institute Of Solid State Physics University Of Bremen
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WENISCH Helmut
Institute of Solid State Physics, University of Bremen
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BEHRINGER Martin
Institute of Solid State Physics, University of Bremen
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FEHRER Michael
Institute of Solid State Physics, University of Bremen
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KLUDE Matthias
Institute of Solid State Physics, University of Bremen
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ISEMANN Andreas
Institute of Solid State Physics, University of Bremen
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Wenisch Helmut
Institute Of Solid State Physics University Of Bremen:(present Address)department Of Applied Physics
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Klude Matthias
Institute Of Solid State Physics University Of Bremen
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Fehrer Michael
Institute Of Solid State Physics University Of Bremen
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Ohkawa K
Sci. Univ. Tokyo Tokyo Jpn
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Ohkawa Kazuhiro
Department Of Applied Physics Faculty Of Science Tokyo University Of Science
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Behringer Martin
Institute Of Solid State Physics University Of Bremen
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Isemann Andreas
Institute Of Solid State Physics University Of Bremen
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- Characteristics of p-type ZnSe Layers Grown by Molecular Beam Epitaxy with Radical Doping
- Real-Index Guided Blue-Green Laser Diode with Small Beam Astigmatism Fabricated Using ZnO Buried Structure
- Instability of Cl-Related Deep Defects in ZnSe
- Blue Electroluminescence from ZnSe p-n Junction Light-Emitting Diodes
- Device Properties of Homo- and Heteroepitaxial ZnSe-Based Laser Diodes
- Growth of Wide Gap II-VI Materials, Its Characterization and Device Application