Morphological Characteristics of $a$-Plane GaN Grown on $r$-Plane Sapphire by Metalorganic Vapor-Phase Epitaxy
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概要
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We report the morphological evolution of $a$-plane GaN thin films grown on $r$-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy. The surface flatness is improved under optimized growth conditions which are different from those of $c$-plane epitaxy. The peak-to-valley height of surface roughness is reduced from 4 to 0.8 μm when GaN is grown at 1120°C on a 40-nm-thick low-temperature GaN (LT-GaN) buffer layer, as well as at 1150°C on a 20-nm-thick LT-GaN. These samples show their highest electron mobility of 220 cm2/(V s) at an electron concentration of $1.1\times 10^{18}$ cm-3 at room temperature.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-11-15
著者
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Kusakabe Kazuhide
Department Of Applied Physics Faculty Of Science Tokyo University Of Science
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Ohkawa Kazuhiro
Department Of Applied Physics Faculty Of Science Tokyo University Of Science
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Ohkawa Kazuhiro
Department of Applied Physics, Faculty of Science, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, Japan
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Kusakabe Kazuhide
Department of Applied Physics, Faculty of Science, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, Japan
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