Photoelectrochemical Properties of InGaN for H2 Generation from Aqueous Water
スポンサーリンク
概要
- 論文の詳細を見る
The photoelectrochemical properties of InxGa1-xN ($x=0.02$ and 0.09) were compared with those of GaN. The band-edge potentials of InxGa1-xN were determined by the Mott–Schottky plot for the first time. The gas generation from a counterelectrode using the In0.02Ga0.91N working electrode was the highest of the three samples. Band-edge potentials and the light absorption of a working photoelectrode presumably affect the gas generation efficiency.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-10-15
著者
-
Fujii Katsushi
Nakamura Inhomogeneous Crystal Project Exploratory Research For Advanced Technology Japan Science An
-
Kusakabe Kazuhide
Department Of Applied Physics Faculty Of Science Tokyo University Of Science
-
Ohkawa Kazuhiro
Nakamura Inhomogeneous Crystal Project Exploratory Research For Advanced Technology Japan Science An
-
Ohkawa Kazuhiro
Nakamura Inhomogeneous Crystal Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku, Tokyo 162-8601, Japan
-
Kusakabe Kazuhide
Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku, Tokyo 162-8601, Japan
関連論文
- High-Quality GaN on AlN Multiple Intermediate Layer with Migration Enhanced Epitaxy by RF-Molecular Beam Epitaxy
- Characterization of Overgrown GaN Layers on Nano-Columns Grown by RF-Molecular Beam Epitaxy : Semiconductors
- Photoelectrochemical Properties of p-Type GaN in Comparison with n-Type GaN
- Photoelectrochemical Properties of Nonpolar and Semipolar GaN
- Morphological Characteristics of $a$-Plane GaN Grown on $r$-Plane Sapphire by Metalorganic Vapor-Phase Epitaxy
- Photoelectrochemical Properties of InGaN for H2 Generation from Aqueous Water
- Direct Observation of an Ordered Phase in ($11\bar{2}0$) Plane InGaN Alloy
- Modeling of Reaction Pathways of GaN Growth by Metalorganic Vapor-Phase Epitaxy Using TMGa/NH3/H2 System: A Computational Fluid Dynamics Simulation Study
- Hydrogen Gas Generation by Splitting Aqueous Water Using n-Type GaN Photoelectrode with Anodic Oxidation