Modeling of Reaction Pathways of GaN Growth by Metalorganic Vapor-Phase Epitaxy Using TMGa/NH3/H2 System: A Computational Fluid Dynamics Simulation Study
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概要
- 論文の詳細を見る
A model of reaction pathways of GaN growth by metalorganic vapor-phase epitaxy was studied by computational fluid dynamics simulations. We included the formation of polymers such as [Ga–N]n and [MMGaNH]n ($n=2--6$) in the reaction model in a TMGa/NH3/H2 system for the first time. The simulations using this reaction modeling successfully explained experimental growth rates at various temperatures, and clarified the main reaction pathway of GaN growth. The change in gas-phase chemistry due to temperature in the range of 300–1400 K was investigated. It was found that the type of reactive molecule changes with temperature, followed by the formation of different polymers in a certain temperature range, that is, [MMGaNH]n at 600–750 K and [Ga–N]n at higher temperatures.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-02-15
著者
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Hirako Akira
Department Of Applied Physics Faculty Of Science Tokyo University Of Science
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Kusakabe Kazuhide
Department Of Applied Physics Faculty Of Science Tokyo University Of Science
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Ohkawa Kazuhiro
Department Of Applied Physics Faculty Of Science Tokyo University Of Science
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Ohkawa Kazuhiro
Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, Japan
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Hirako Akira
Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, Japan
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Kusakabe Kazuhide
Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, Japan
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