Investigation of Growth Mechanism for InGaN by Metal--Organic Vapor Phase Epitaxy Using Computational Fluid Simulation
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概要
- 論文の詳細を見る
We investigated the mechanism of metal--organic vapor phase epitaxy (MOVPE) growth for InGaN by comparing experimental and simulation results. The simulation results showed a similar trend to the experimental results. Therefore, the simulation system can be used to speculate on physical and chemical phenomena through the behavior of precursors. InGaN growth is largely affected by the amounts of both trimethylindium (TMIn) and NH<inf>3</inf>supplied. This is because InN growth is dependent on the amount of NH<inf>2</inf>physisorbed on a surface, which is generated by NH<inf>3</inf>. Moreover, the decomposition of crystallized InN and the desorption of these decomposed precursors of InN during growth cannot be ignored.
- 2013-08-25
著者
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Hirako Akira
Department Of Applied Physics Faculty Of Science Tokyo University Of Science
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Ohkawa Kazuhiro
Department Of Applied Physics Faculty Of Science Tokyo University Of Science
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Arai Yu
Department of Applied Physics, Faculty of Science, Tokyo University of Science, Katsushika, Tokyo 125-8585, Japan
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Deura Momoko
Department of Applied Physics, Faculty of Science, Tokyo University of Science, Katsushika, Tokyo 125-8585, Japan
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Ohkawa Kazuhiro
Department of Applied Physics, Faculty of Science, Tokyo University of Science, Katsushika, Tokyo 125-8585, Japan
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Ichinohe Fumitaka
Department of Applied Physics, Faculty of Science, Tokyo University of Science, Katsushika, Tokyo 125-8585, Japan
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Shiohama Kenichi
Department of Applied Physics, Faculty of Science, Tokyo University of Science, Katsushika, Tokyo 125-8585, Japan
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